Diameter Optimization of Nano-scale SiNWT Based SRAM Cell
This paper represents diameter and logic voltage level optimizations of 6-Silicon Nanowire Transistors (SiNWT) SRAM. This study is to demonstrate diameter of nanowires effects at a different logic voltage level (Vdd) on the static characteristics of Nano-scale SiNWT Based SRAM Cell. Noise margins (N...
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| Main Authors: | , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2015
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| Subjects: | |
| Online Access: | http://umpir.ump.edu.my/id/eprint/11635/1/ICCSCE2015%20Paper.pdf http://umpir.ump.edu.my/id/eprint/11635/ http://iccsce.acscrg.com/ |
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