Growth of non-polar (11-20) a-plane GaN based leds grown on (1-120) r-plane sapphire substrate via MOCVD / Anas Kamarundzaman
Conventional gallium nitride (GaN)-based light-emitting diodes (LEDs), commonly grown in the c-plane direction suffer from the huge built-in electric field from spontaneous and piezoelectric polarisation, which cause the energy-band bending in the energy band diagram. Motivated to avoid the undesira...
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| フォーマット: | 学位論文 |
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2022
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| オンライン･アクセス: | http://studentsrepo.um.edu.my/15197/2/Anas_Kamarundzaman.pdf http://studentsrepo.um.edu.my/15197/1/Anas_Kamarundzaman.pdf http://studentsrepo.um.edu.my/15197/ |
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