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Electronic surface, optical and electrical properties of p - GaN activated via in-situ MOCVD and ex-situ thermal annealing in InGaN/GaN LED

Electronic surface properties, optical and electrical characteristics of p-type Mg-doped Gallium Nitride (p-GaN) activated under different thermal annealing condition were investigated. In this work, p-GaN samples were subjected to in-situ and ex-situ thermal annealing process at 650 degrees C in Ni...

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Main Authors: Mahat, Mohamad Raqif, Talik, Noor Azrina, Abd Rahman, Mohd Nazri, Anuar, Mohd Afiq, Allif, Kamarul, Azman, Adreen, Nakajima, Hideki, Shuhaimi, Ahmad, Abd Majid, Wan Haliza
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Published: Elsevier 2020
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QC Physics
Online Access:http://eprints.um.edu.my/36927/
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spelling my.um.eprints.369272024-11-07T01:17:07Z http://eprints.um.edu.my/36927/ Electronic surface, optical and electrical properties of p - GaN activated via in-situ MOCVD and ex-situ thermal annealing in InGaN/GaN LED Mahat, Mohamad Raqif Talik, Noor Azrina Abd Rahman, Mohd Nazri Anuar, Mohd Afiq Allif, Kamarul Azman, Adreen Nakajima, Hideki Shuhaimi, Ahmad Abd Majid, Wan Haliza QC Physics Electronic surface properties, optical and electrical characteristics of p-type Mg-doped Gallium Nitride (p-GaN) activated under different thermal annealing condition were investigated. In this work, p-GaN samples were subjected to in-situ and ex-situ thermal annealing process at 650 degrees C in Nitrogen (N-2) rich condition. In-situ annealing process took place in Metal Oxide Chemical Vapor Deposition (MOCVD) chamber while ex-situ annealing process was carried out in the conventional oven. X-Ray and Ultraviolet Photoemission Spectroscopy (XPS/UPS) were used to observe the energy alignment of the p-GaN surface. From PES spectra, the sample subjected to in-situ thermal annealing shown to exhibit lower surface bend bending of 0.28 eV as compared to ex-situ thermal annealing activation with 0.45 eV band bending. This result is in agreement with specific contact resistance measurement that shows in-situ sample exhibits lower resistance resulted in better carrier injection from metal to p-GaN. Photoluminescence (PL) spectra elucidates that in-situ sample has a good surface quality with less nitrogen related vacancies (V-N) formed on the p-GaN surface. All these results are further proved with the higher output power from LED with in-situ annealing. At 20 mA, in-situ sample shown an increment of similar to 14% light output power compared to ex-situ sample. Results obtained in this work suggest that the thermal activation condition for p-GaN activation process plays an active role on the surface quality as well as the energy alignment of the film surface and shows the potential of in-situ p-GaN activation for tunnel junction structure. Elsevier 2020-02 Article PeerReviewed Mahat, Mohamad Raqif and Talik, Noor Azrina and Abd Rahman, Mohd Nazri and Anuar, Mohd Afiq and Allif, Kamarul and Azman, Adreen and Nakajima, Hideki and Shuhaimi, Ahmad and Abd Majid, Wan Haliza (2020) Electronic surface, optical and electrical properties of p - GaN activated via in-situ MOCVD and ex-situ thermal annealing in InGaN/GaN LED. Materials Science in Semiconductor Processing, 106. ISSN 1369-8001, DOI https://doi.org/10.1016/j.mssp.2019.104757 <https://doi.org/10.1016/j.mssp.2019.104757>. 10.1016/j.mssp.2019.104757
institution Universiti Malaya
building UM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaya
content_source UM Research Repository
url_provider http://eprints.um.edu.my/
topic QC Physics
spellingShingle QC Physics
Mahat, Mohamad Raqif
Talik, Noor Azrina
Abd Rahman, Mohd Nazri
Anuar, Mohd Afiq
Allif, Kamarul
Azman, Adreen
Nakajima, Hideki
Shuhaimi, Ahmad
Abd Majid, Wan Haliza
Electronic surface, optical and electrical properties of p - GaN activated via in-situ MOCVD and ex-situ thermal annealing in InGaN/GaN LED
description Electronic surface properties, optical and electrical characteristics of p-type Mg-doped Gallium Nitride (p-GaN) activated under different thermal annealing condition were investigated. In this work, p-GaN samples were subjected to in-situ and ex-situ thermal annealing process at 650 degrees C in Nitrogen (N-2) rich condition. In-situ annealing process took place in Metal Oxide Chemical Vapor Deposition (MOCVD) chamber while ex-situ annealing process was carried out in the conventional oven. X-Ray and Ultraviolet Photoemission Spectroscopy (XPS/UPS) were used to observe the energy alignment of the p-GaN surface. From PES spectra, the sample subjected to in-situ thermal annealing shown to exhibit lower surface bend bending of 0.28 eV as compared to ex-situ thermal annealing activation with 0.45 eV band bending. This result is in agreement with specific contact resistance measurement that shows in-situ sample exhibits lower resistance resulted in better carrier injection from metal to p-GaN. Photoluminescence (PL) spectra elucidates that in-situ sample has a good surface quality with less nitrogen related vacancies (V-N) formed on the p-GaN surface. All these results are further proved with the higher output power from LED with in-situ annealing. At 20 mA, in-situ sample shown an increment of similar to 14% light output power compared to ex-situ sample. Results obtained in this work suggest that the thermal activation condition for p-GaN activation process plays an active role on the surface quality as well as the energy alignment of the film surface and shows the potential of in-situ p-GaN activation for tunnel junction structure.
format Article
author Mahat, Mohamad Raqif
Talik, Noor Azrina
Abd Rahman, Mohd Nazri
Anuar, Mohd Afiq
Allif, Kamarul
Azman, Adreen
Nakajima, Hideki
Shuhaimi, Ahmad
Abd Majid, Wan Haliza
author_facet Mahat, Mohamad Raqif
Talik, Noor Azrina
Abd Rahman, Mohd Nazri
Anuar, Mohd Afiq
Allif, Kamarul
Azman, Adreen
Nakajima, Hideki
Shuhaimi, Ahmad
Abd Majid, Wan Haliza
author_sort Mahat, Mohamad Raqif
title Electronic surface, optical and electrical properties of p - GaN activated via in-situ MOCVD and ex-situ thermal annealing in InGaN/GaN LED
title_short Electronic surface, optical and electrical properties of p - GaN activated via in-situ MOCVD and ex-situ thermal annealing in InGaN/GaN LED
title_full Electronic surface, optical and electrical properties of p - GaN activated via in-situ MOCVD and ex-situ thermal annealing in InGaN/GaN LED
title_fullStr Electronic surface, optical and electrical properties of p - GaN activated via in-situ MOCVD and ex-situ thermal annealing in InGaN/GaN LED
title_full_unstemmed Electronic surface, optical and electrical properties of p - GaN activated via in-situ MOCVD and ex-situ thermal annealing in InGaN/GaN LED
title_sort electronic surface, optical and electrical properties of p - gan activated via in-situ mocvd and ex-situ thermal annealing in ingan/gan led
publisher Elsevier
publishDate 2020
url http://eprints.um.edu.my/36927/
_version_ 1816130387280134144
score 13.222552

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