Structural and morphological properties of AlGaN thin films prepared by co-sputtering technique
AlGaN thin films can be used in a variety of electronic applications because have a wide energy band-gap and it's tuneable in range (3.11 eV-6.4 eV). However, the deposition of AlGaN facing difficulties depositing at room temperature and required longer time deposition to achieved high quality...
Saved in:
| Main Authors: | , , , , , , , , , , |
|---|---|
| 格式: | Conference or Workshop Item |
| 出版: |
2021
|
| 主题: | |
| 在线阅读: | http://eprints.um.edu.my/35844/ https://www.scopus.com/inward/record.uri?eid=2-s2.0-85115067149&doi=10.1109%2fRSM52397.2021.9511605&partnerID=40&md5=2abca249047f39b85d901352449cab53 |
| 标签: |
添加标签
没有标签, 成为第一个标记此记录!
|