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Effects of radio-frequency power on structural properties and morphology of AlGaN thin film prepared by co-sputtering technique

To date, the deposition of AlGaN thin film using the co-sputtering technique at room temperature has not been reported yet. The use of AlGaN for electronic devices has been widely known because of its ultra-wide bandgap. However, to deposit the AlGaN thin film and achieved high quality of AlGaN film...

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Bibliographic Details
Main Authors: Othman, Nur Afiqah, Nayan, Nafarizal, Mustafa, Mohd. Kamarulzaki, Azman, Zulkifli, Megat Hasnan, Megat Muhammad Ikhsan, Jaafar, Siti Noryasmin, Bakri, Anis Suhaili, Mamat, Mohd. Hafiz, Mohd. Yusop, Mohd. Zamri, Abu Bakar, Ahmad Shuhaimi, Ahmad, Mohd. Yazid
Format: Article
Language:English
Published: Penerbit UTM Press 2021
Subjects:
TJ Mechanical engineering and machinery
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.utm.my/id/eprint/97561/1/MohdZamri2021_EffectsofRadioFrequencyPower.pdf
http://eprints.utm.my/id/eprint/97561/
http://dx.doi.org/10.11113/elektrika.v20n2.270
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http://eprints.utm.my/id/eprint/97561/1/MohdZamri2021_EffectsofRadioFrequencyPower.pdf
http://eprints.utm.my/id/eprint/97561/
http://dx.doi.org/10.11113/elektrika.v20n2.270

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