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Structural and morphological properties of AlGaN thin films prepared by co-sputtering technique

AlGaN thin films can be used in a variety of electronic applications because have a wide energy band-gap and it's tuneable in range (3.11 eV-6.4 eV). However, the deposition of AlGaN facing difficulties depositing at room temperature and required longer time deposition to achieved high quality...

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Main Authors:	Othman, Nur Afiqah, Nayan, Nafarizal, Mustafa, Mohd Kamarulzaki, Azman, Zulkifli, Megat Hasnan, Megat Muhammad Ikhsan, Bakri, Anis Suhaili, Jaffar, Siti Noryasmin, Abu Bakar, Ahmad Shuhaimi, Mamat, Mohd Hafiz, Mohd Yusop, Mohd Zamri, Ahmad, Mohd Yazid
Format:	Conference or Workshop Item
Published:	2021
Subjects:	TJ Mechanical engineering and machinery TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://eprints.um.edu.my/35844/ https://www.scopus.com/inward/record.uri?eid=2-s2.0-85115067149&doi=10.1109%2fRSM52397.2021.9511605&partnerID=40&md5=2abca249047f39b85d901352449cab53
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spelling	my.um.eprints.358442023-12-06T10:56:00Z http://eprints.um.edu.my/35844/ Structural and morphological properties of AlGaN thin films prepared by co-sputtering technique Othman, Nur Afiqah Nayan, Nafarizal Mustafa, Mohd Kamarulzaki Azman, Zulkifli Megat Hasnan, Megat Muhammad Ikhsan Bakri, Anis Suhaili Jaffar, Siti Noryasmin Abu Bakar, Ahmad Shuhaimi Mamat, Mohd Hafiz Mohd Yusop, Mohd Zamri Ahmad, Mohd Yazid TJ Mechanical engineering and machinery TK Electrical engineering. Electronics Nuclear engineering AlGaN thin films can be used in a variety of electronic applications because have a wide energy band-gap and it's tuneable in range (3.11 eV-6.4 eV). However, the deposition of AlGaN facing difficulties depositing at room temperature and required longer time deposition to achieved high quality of AlGaN thin films. Due to that, there not many attempts on discovering AlGaN thin film deposition using the sputtering technique. In this work, the co-sputtering process was used to deposit AlGaN thin films, and the impacts of nitrogen gas flow rate on the structural and morphological characteristics of AlGaN thin films were examined. AlGaN films were sputtered simultaneously on silicon (111) substrate at minimum time deposition and room temperature using GaN and Al target. The fabricated AlGaN thin films were characterized using X-ray diffraction (XRD), atomic force microscopy (AFM), and surface profilometer. The AlGaN crystal structures do not exist in the XRD result. The roughness of the AlGaN films with 50 sccm nitrogen flow was 1.19 nm, 1.41 nm for 25 sccm, and 4.91 nm for AlGaN with no nitrogen gas flow. Meanwhile, grain size readings have varied with different nitrogen gas fluxes. The profilometer shows that the thickness of AlGaN films was decreasing with the increase of nitrogen gas flow. The Co-sputtering technique may be considered a great approach to improving the deposition of AlGaN thin films at minimizing time and temperature. © 2021 IEEE. 2021-07-02 Conference or Workshop Item PeerReviewed Othman, Nur Afiqah and Nayan, Nafarizal and Mustafa, Mohd Kamarulzaki and Azman, Zulkifli and Megat Hasnan, Megat Muhammad Ikhsan and Bakri, Anis Suhaili and Jaffar, Siti Noryasmin and Abu Bakar, Ahmad Shuhaimi and Mamat, Mohd Hafiz and Mohd Yusop, Mohd Zamri and Ahmad, Mohd Yazid (2021) Structural and morphological properties of AlGaN thin films prepared by co-sputtering technique. In: 13th IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2021, 2 - 4 August 2021, Virtual, Kuala Lumpur. https://www.scopus.com/inward/record.uri?eid=2-s2.0-85115067149&doi=10.1109%2fRSM52397.2021.9511605&partnerID=40&md5=2abca249047f39b85d901352449cab53
institution	Universiti Malaya
building	UM Library
collection	Institutional Repository
continent	Asia
country	Malaysia
content_provider	Universiti Malaya
content_source	UM Research Repository
url_provider	http://eprints.um.edu.my/
topic	TJ Mechanical engineering and machinery TK Electrical engineering. Electronics Nuclear engineering
spellingShingle	TJ Mechanical engineering and machinery TK Electrical engineering. Electronics Nuclear engineering Othman, Nur Afiqah Nayan, Nafarizal Mustafa, Mohd Kamarulzaki Azman, Zulkifli Megat Hasnan, Megat Muhammad Ikhsan Bakri, Anis Suhaili Jaffar, Siti Noryasmin Abu Bakar, Ahmad Shuhaimi Mamat, Mohd Hafiz Mohd Yusop, Mohd Zamri Ahmad, Mohd Yazid Structural and morphological properties of AlGaN thin films prepared by co-sputtering technique
description	AlGaN thin films can be used in a variety of electronic applications because have a wide energy band-gap and it's tuneable in range (3.11 eV-6.4 eV). However, the deposition of AlGaN facing difficulties depositing at room temperature and required longer time deposition to achieved high quality of AlGaN thin films. Due to that, there not many attempts on discovering AlGaN thin film deposition using the sputtering technique. In this work, the co-sputtering process was used to deposit AlGaN thin films, and the impacts of nitrogen gas flow rate on the structural and morphological characteristics of AlGaN thin films were examined. AlGaN films were sputtered simultaneously on silicon (111) substrate at minimum time deposition and room temperature using GaN and Al target. The fabricated AlGaN thin films were characterized using X-ray diffraction (XRD), atomic force microscopy (AFM), and surface profilometer. The AlGaN crystal structures do not exist in the XRD result. The roughness of the AlGaN films with 50 sccm nitrogen flow was 1.19 nm, 1.41 nm for 25 sccm, and 4.91 nm for AlGaN with no nitrogen gas flow. Meanwhile, grain size readings have varied with different nitrogen gas fluxes. The profilometer shows that the thickness of AlGaN films was decreasing with the increase of nitrogen gas flow. The Co-sputtering technique may be considered a great approach to improving the deposition of AlGaN thin films at minimizing time and temperature. © 2021 IEEE.
format	Conference or Workshop Item
author	Othman, Nur Afiqah Nayan, Nafarizal Mustafa, Mohd Kamarulzaki Azman, Zulkifli Megat Hasnan, Megat Muhammad Ikhsan Bakri, Anis Suhaili Jaffar, Siti Noryasmin Abu Bakar, Ahmad Shuhaimi Mamat, Mohd Hafiz Mohd Yusop, Mohd Zamri Ahmad, Mohd Yazid
author_facet	Othman, Nur Afiqah Nayan, Nafarizal Mustafa, Mohd Kamarulzaki Azman, Zulkifli Megat Hasnan, Megat Muhammad Ikhsan Bakri, Anis Suhaili Jaffar, Siti Noryasmin Abu Bakar, Ahmad Shuhaimi Mamat, Mohd Hafiz Mohd Yusop, Mohd Zamri Ahmad, Mohd Yazid
author_sort	Othman, Nur Afiqah
title	Structural and morphological properties of AlGaN thin films prepared by co-sputtering technique
title_short	Structural and morphological properties of AlGaN thin films prepared by co-sputtering technique
title_full	Structural and morphological properties of AlGaN thin films prepared by co-sputtering technique
title_fullStr	Structural and morphological properties of AlGaN thin films prepared by co-sputtering technique
title_full_unstemmed	Structural and morphological properties of AlGaN thin films prepared by co-sputtering technique
title_sort	structural and morphological properties of algan thin films prepared by co-sputtering technique
publishDate	2021
url	http://eprints.um.edu.my/35844/ https://www.scopus.com/inward/record.uri?eid=2-s2.0-85115067149&doi=10.1109%2fRSM52397.2021.9511605&partnerID=40&md5=2abca249047f39b85d901352449cab53
_version_	1787132373448523776
score	13.211869

Structural and morphological properties of AlGaN thin films prepared by co-sputtering technique

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