صورة الغلاف

Structural and morphological properties of AlGaN thin films prepared by co-sputtering technique

AlGaN thin films can be used in a variety of electronic applications because have a wide energy band-gap and it's tuneable in range (3.11 eV-6.4 eV). However, the deposition of AlGaN facing difficulties depositing at room temperature and required longer time deposition to achieved high quality...

وصف كامل

محفوظ في:
التفاصيل البيبلوغرافية
المؤلفون الرئيسيون: Othman, Nur Afiqah, Nayan, Nafarizal, Mustafa, Mohd Kamarulzaki, Azman, Zulkifli, Megat Hasnan, Megat Muhammad Ikhsan, Bakri, Anis Suhaili, Jaffar, Siti Noryasmin, Abu Bakar, Ahmad Shuhaimi, Mamat, Mohd Hafiz, Mohd Yusop, Mohd Zamri, Ahmad, Mohd Yazid
التنسيق: Conference or Workshop Item
منشور في: 2021
الموضوعات:
TJ Mechanical engineering and machinery
TK Electrical engineering. Electronics Nuclear engineering
الوصول للمادة أونلاين:http://eprints.um.edu.my/35844/
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85115067149&doi=10.1109%2fRSM52397.2021.9511605&partnerID=40&md5=2abca249047f39b85d901352449cab53
الوسوم: إضافة وسم
لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!

الانترنت

http://eprints.um.edu.my/35844/
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85115067149&doi=10.1109%2fRSM52397.2021.9511605&partnerID=40&md5=2abca249047f39b85d901352449cab53

مواد مشابهة