Structural and morphological properties of AlGaN thin films prepared by co-sputtering technique
AlGaN thin films can be used in a variety of electronic applications because have a wide energy band-gap and it's tuneable in range (3.11 eV-6.4 eV). However, the deposition of AlGaN facing difficulties depositing at room temperature and required longer time deposition to achieved high quality...
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| 主要な著者: | , , , , , , , , , , |
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| フォーマット: | Conference or Workshop Item |
| 出版事項: |
2021
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| 主題: | |
| オンライン･アクセス: | http://eprints.um.edu.my/35844/ https://www.scopus.com/inward/record.uri?eid=2-s2.0-85115067149&doi=10.1109%2fRSM52397.2021.9511605&partnerID=40&md5=2abca249047f39b85d901352449cab53 |
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