Luminescence and crystalline properties of InGaN-based LED on Si substrate with AlN/GaN superlattice structure
A crack-free indium gallium nitride (InGaN) based light emitting diode (LED) grown on silicon (Si) substrate was successfully demonstrated by introducing aluminium nitride/gallium nitride (AlN/GaN) superlattice structure (SLS) in the growth of the LED. The luminescence and the crystalline properties...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Published: |
Penerbit Universiti Sains Malaysia
2021
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| Subjects: | |
| Online Access: | http://eprints.um.edu.my/35072/ |
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