Disilane doping of semi-polar (11-22) n-GaN: The impact of terrace-like evolution toward the enhancement of the electrical properties
Semi-polar (11-22) n-type gallium nitride thin films with various disilane doping levels were deposited via metal-organic chemical vapor deposition. The impact of the dissimilar disilane doping levels on the crystal, morphological, strain, and electrical properties was extensively studied. An X-ray...
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| 主要な著者: | , , , , |
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| フォーマット: | 論文 |
| 出版事項: |
Elsevier
2021
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| 主題: | |
| オンライン･アクセス: | http://eprints.um.edu.my/27901/ |
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