Disilane doping of semi-polar (11-22) n-GaN: The impact of terrace-like evolution toward the enhancement of the electrical properties
Semi-polar (11-22) n-type gallium nitride thin films with various disilane doping levels were deposited via metal-organic chemical vapor deposition. The impact of the dissimilar disilane doping levels on the crystal, morphological, strain, and electrical properties was extensively studied. An X-ray...
Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Published: |
Elsevier
2021
|
| Subjects: | |
| Online Access: | http://eprints.um.edu.my/27901/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|