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Disilane doping of semi-polar (11-22) n-GaN: The impact of terrace-like evolution toward the enhancement of the electrical properties

Semi-polar (11-22) n-type gallium nitride thin films with various disilane doping levels were deposited via metal-organic chemical vapor deposition. The impact of the dissimilar disilane doping levels on the crystal, morphological, strain, and electrical properties was extensively studied. An X-ray...

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التفاصيل البيبلوغرافية
المؤلفون الرئيسيون: Makinudin, Abdullah Haaziq Ahmad, Omar, Al-Zuhairi, Bakar, Ahmad Shuhaimi Abu, Anuar, Afiq, Supangat, Azzuliani
التنسيق: مقال
منشور في: Elsevier 2021
الموضوعات:
QC Physics
TA Engineering (General). Civil engineering (General)
الوصول للمادة أونلاين:http://eprints.um.edu.my/27901/
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id my.um.eprints.27901
record_format eprints
spelling my.um.eprints.279012022-03-31T04:12:38Z http://eprints.um.edu.my/27901/ Disilane doping of semi-polar (11-22) n-GaN: The impact of terrace-like evolution toward the enhancement of the electrical properties Makinudin, Abdullah Haaziq Ahmad Omar, Al-Zuhairi Bakar, Ahmad Shuhaimi Abu Anuar, Afiq Supangat, Azzuliani QC Physics TA Engineering (General). Civil engineering (General) Semi-polar (11-22) n-type gallium nitride thin films with various disilane doping levels were deposited via metal-organic chemical vapor deposition. The impact of the dissimilar disilane doping levels on the crystal, morphological, strain, and electrical properties was extensively studied. An X-ray rocking curve analysis demonstrated an improved crystal quality with enhanced terrace-like features using 15 standard cubic centimeters per minute of disilane doping. A closely packed step terrace-like feature was exhibited, reducing the density of arrowhead-like features. This facilitated a smoother surface with a root mean square surface roughness of 5.7 nm. Raman spectroscopy revealed that using an intermediate disilane flux reduced the compressive strain. An electrical analysis also showed that a moderate disilane doping level improved the carrier concentration and mobility to 1.3 x 10(18) cm(-3) and 99.3 cm(-2). V-1. s(-1), respectively. Elsevier 2021-02-28 Article PeerReviewed Makinudin, Abdullah Haaziq Ahmad and Omar, Al-Zuhairi and Bakar, Ahmad Shuhaimi Abu and Anuar, Afiq and Supangat, Azzuliani (2021) Disilane doping of semi-polar (11-22) n-GaN: The impact of terrace-like evolution toward the enhancement of the electrical properties. Thin Solid Films, 720. ISSN 0040-6090, DOI https://doi.org/10.1016/j.tsf.2020.138489 <https://doi.org/10.1016/j.tsf.2020.138489>. 10.1016/j.tsf.2020.138489
institution Universiti Malaya
building UM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaya
content_source UM Research Repository
url_provider http://eprints.um.edu.my/
topic QC Physics
TA Engineering (General). Civil engineering (General)
spellingShingle QC Physics
TA Engineering (General). Civil engineering (General)
Makinudin, Abdullah Haaziq Ahmad
Omar, Al-Zuhairi
Bakar, Ahmad Shuhaimi Abu
Anuar, Afiq
Supangat, Azzuliani
Disilane doping of semi-polar (11-22) n-GaN: The impact of terrace-like evolution toward the enhancement of the electrical properties
description Semi-polar (11-22) n-type gallium nitride thin films with various disilane doping levels were deposited via metal-organic chemical vapor deposition. The impact of the dissimilar disilane doping levels on the crystal, morphological, strain, and electrical properties was extensively studied. An X-ray rocking curve analysis demonstrated an improved crystal quality with enhanced terrace-like features using 15 standard cubic centimeters per minute of disilane doping. A closely packed step terrace-like feature was exhibited, reducing the density of arrowhead-like features. This facilitated a smoother surface with a root mean square surface roughness of 5.7 nm. Raman spectroscopy revealed that using an intermediate disilane flux reduced the compressive strain. An electrical analysis also showed that a moderate disilane doping level improved the carrier concentration and mobility to 1.3 x 10(18) cm(-3) and 99.3 cm(-2). V-1. s(-1), respectively.
format Article
author Makinudin, Abdullah Haaziq Ahmad
Omar, Al-Zuhairi
Bakar, Ahmad Shuhaimi Abu
Anuar, Afiq
Supangat, Azzuliani
author_facet Makinudin, Abdullah Haaziq Ahmad
Omar, Al-Zuhairi
Bakar, Ahmad Shuhaimi Abu
Anuar, Afiq
Supangat, Azzuliani
author_sort Makinudin, Abdullah Haaziq Ahmad
title Disilane doping of semi-polar (11-22) n-GaN: The impact of terrace-like evolution toward the enhancement of the electrical properties
title_short Disilane doping of semi-polar (11-22) n-GaN: The impact of terrace-like evolution toward the enhancement of the electrical properties
title_full Disilane doping of semi-polar (11-22) n-GaN: The impact of terrace-like evolution toward the enhancement of the electrical properties
title_fullStr Disilane doping of semi-polar (11-22) n-GaN: The impact of terrace-like evolution toward the enhancement of the electrical properties
title_full_unstemmed Disilane doping of semi-polar (11-22) n-GaN: The impact of terrace-like evolution toward the enhancement of the electrical properties
title_sort disilane doping of semi-polar (11-22) n-gan: the impact of terrace-like evolution toward the enhancement of the electrical properties
publisher Elsevier
publishDate 2021
url http://eprints.um.edu.my/27901/
_version_ 1735409537154809856
score 13.251813

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