Disilane doping of semi-polar (11-22) n-GaN: The impact of terrace-like evolution toward the enhancement of the electrical properties
Semi-polar (11-22) n-type gallium nitride thin films with various disilane doping levels were deposited via metal-organic chemical vapor deposition. The impact of the dissimilar disilane doping levels on the crystal, morphological, strain, and electrical properties was extensively studied. An X-ray...
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| Main Authors: | , , , , |
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| Format: | Article |
| Published: |
Elsevier
2021
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| Subjects: | |
| Online Access: | http://eprints.um.edu.my/27901/ |
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| Summary: | Semi-polar (11-22) n-type gallium nitride thin films with various disilane doping levels were deposited via metal-organic chemical vapor deposition. The impact of the dissimilar disilane doping levels on the crystal, morphological, strain, and electrical properties was extensively studied. An X-ray rocking curve analysis demonstrated an improved crystal quality with enhanced terrace-like features using 15 standard cubic centimeters per minute of disilane doping. A closely packed step terrace-like feature was exhibited, reducing the density of arrowhead-like features. This facilitated a smoother surface with a root mean square surface roughness of 5.7 nm. Raman spectroscopy revealed that using an intermediate disilane flux reduced the compressive strain. An electrical analysis also showed that a moderate disilane doping level improved the carrier concentration and mobility to 1.3 x 10(18) cm(-3) and 99.3 cm(-2). V-1. s(-1), respectively. |
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