Staff View: The crystallographic quality and band-edge transition of as-deposited PALE AlN films via metal organic chemical vapor deposition

The crystallographic quality and band-edge transition of as-deposited PALE AlN films via metal organic chemical vapor deposition

Diversification of pulse cycle numbers proportional to the AlN films thickness using PALE technique on c-plane sapphire substrate were carried out via MOCVD. It was experiential that the structural features of as-deposited AlN films were significantly impinged on the film thickness where the highest...

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Main Authors:	Abd Rahman, Mohd Nazri, Shuhaimi, Ahmad, Seng, Ooi Chong, Tan, Gary, Anuar, Afiq, Talik, Noor Azrina, Abdul Khudus, Muhammad Imran Mustafa, Chanlek, Narong, Abd Majid, Wan Haliza
Format:	Article
Published:	Springer 2021
Subjects:	Q Science (General) QC Physics
Online Access:	http://eprints.um.edu.my/25974/ https://doi.org/10.1007/s10854-020-05070-3
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spelling	my.um.eprints.259742021-05-25T02:47:10Z http://eprints.um.edu.my/25974/ The crystallographic quality and band-edge transition of as-deposited PALE AlN films via metal organic chemical vapor deposition Abd Rahman, Mohd Nazri Shuhaimi, Ahmad Seng, Ooi Chong Tan, Gary Anuar, Afiq Talik, Noor Azrina Abdul Khudus, Muhammad Imran Mustafa Chanlek, Narong Abd Majid, Wan Haliza Q Science (General) QC Physics Diversification of pulse cycle numbers proportional to the AlN films thickness using PALE technique on c-plane sapphire substrate were carried out via MOCVD. It was experiential that the structural features of as-deposited AlN films were significantly impinged on the film thickness where the highest number of pulse cycles (1050 pairs) present the lowest (0 0 0 2)-symmetry and (1 0–1 2)-asymmetry XRC analysis, manifest a decrease of threaded dislocation density. The XPS spectra present a low foreign impurities inclusion on the AlN film surface was achieved even at highest cycle number by engaging the PALE growth technique. The spectroscopy of PL and UV–Vis NIR were employed to probe the optical characteristics involving the absorption and their band-edge transitions. In both optical spectroscopies, the room temperature of band-edge emission lines has expressed a significant interconnection between the structural and optical quality of as-deposited AlN films at different pulse cycle numbers. © 2021, The Author(s), under exclusive licence to Springer Science+Business Media, LLC part of Springer Nature. Springer 2021 Article PeerReviewed Abd Rahman, Mohd Nazri and Shuhaimi, Ahmad and Seng, Ooi Chong and Tan, Gary and Anuar, Afiq and Talik, Noor Azrina and Abdul Khudus, Muhammad Imran Mustafa and Chanlek, Narong and Abd Majid, Wan Haliza (2021) The crystallographic quality and band-edge transition of as-deposited PALE AlN films via metal organic chemical vapor deposition. Journal of Materials Science: Materials in Electronics, 32 (3). pp. 3211-3221. ISSN 0957-4522 https://doi.org/10.1007/s10854-020-05070-3 doi:10.1007/s10854-020-05070-3
institution	Universiti Malaya
building	UM Library
collection	Institutional Repository
continent	Asia
country	Malaysia
content_provider	Universiti Malaya
content_source	UM Research Repository
url_provider	http://eprints.um.edu.my/
topic	Q Science (General) QC Physics
spellingShingle	Q Science (General) QC Physics Abd Rahman, Mohd Nazri Shuhaimi, Ahmad Seng, Ooi Chong Tan, Gary Anuar, Afiq Talik, Noor Azrina Abdul Khudus, Muhammad Imran Mustafa Chanlek, Narong Abd Majid, Wan Haliza The crystallographic quality and band-edge transition of as-deposited PALE AlN films via metal organic chemical vapor deposition
description	Diversification of pulse cycle numbers proportional to the AlN films thickness using PALE technique on c-plane sapphire substrate were carried out via MOCVD. It was experiential that the structural features of as-deposited AlN films were significantly impinged on the film thickness where the highest number of pulse cycles (1050 pairs) present the lowest (0 0 0 2)-symmetry and (1 0–1 2)-asymmetry XRC analysis, manifest a decrease of threaded dislocation density. The XPS spectra present a low foreign impurities inclusion on the AlN film surface was achieved even at highest cycle number by engaging the PALE growth technique. The spectroscopy of PL and UV–Vis NIR were employed to probe the optical characteristics involving the absorption and their band-edge transitions. In both optical spectroscopies, the room temperature of band-edge emission lines has expressed a significant interconnection between the structural and optical quality of as-deposited AlN films at different pulse cycle numbers. © 2021, The Author(s), under exclusive licence to Springer Science+Business Media, LLC part of Springer Nature.
format	Article
author	Abd Rahman, Mohd Nazri Shuhaimi, Ahmad Seng, Ooi Chong Tan, Gary Anuar, Afiq Talik, Noor Azrina Abdul Khudus, Muhammad Imran Mustafa Chanlek, Narong Abd Majid, Wan Haliza
author_facet	Abd Rahman, Mohd Nazri Shuhaimi, Ahmad Seng, Ooi Chong Tan, Gary Anuar, Afiq Talik, Noor Azrina Abdul Khudus, Muhammad Imran Mustafa Chanlek, Narong Abd Majid, Wan Haliza
author_sort	Abd Rahman, Mohd Nazri
title	The crystallographic quality and band-edge transition of as-deposited PALE AlN films via metal organic chemical vapor deposition
title_short	The crystallographic quality and band-edge transition of as-deposited PALE AlN films via metal organic chemical vapor deposition
title_full	The crystallographic quality and band-edge transition of as-deposited PALE AlN films via metal organic chemical vapor deposition
title_fullStr	The crystallographic quality and band-edge transition of as-deposited PALE AlN films via metal organic chemical vapor deposition
title_full_unstemmed	The crystallographic quality and band-edge transition of as-deposited PALE AlN films via metal organic chemical vapor deposition
title_sort	crystallographic quality and band-edge transition of as-deposited pale aln films via metal organic chemical vapor deposition
publisher	Springer
publishDate	2021
url	http://eprints.um.edu.my/25974/ https://doi.org/10.1007/s10854-020-05070-3
_version_	1702170272859160576
score	13.211869

The crystallographic quality and band-edge transition of as-deposited PALE AlN films via metal organic chemical vapor deposition

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