The crystallographic quality and band-edge transition of as-deposited PALE AlN films via metal organic chemical vapor deposition
Diversification of pulse cycle numbers proportional to the AlN films thickness using PALE technique on c-plane sapphire substrate were carried out via MOCVD. It was experiential that the structural features of as-deposited AlN films were significantly impinged on the film thickness where the highest...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Published: |
Springer
2021
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| Subjects: | |
| Online Access: | http://eprints.um.edu.my/25974/ https://doi.org/10.1007/s10854-020-05070-3 |
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