Effects of pulse cycle number on the quality of pulsed atomic-layer epitaxy AlN films grown via metal organic chemical vapor deposition
The effect of different numbers of Al and N2 pulse cycles on the quality of AlN films prepared via the pulsed atomic-layer epitaxy (PALE) technique and epitaxially deposited on a c-plane sapphire substrate by metal organic chemical vapor deposition were investigated. The characteristics of AlN/sapph...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Published: |
IOP Publishing
2019
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| Subjects: | |
| Online Access: | http://eprints.um.edu.my/23703/ https://doi.org/10.7567/1347-4065/ab09d3 |
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