Staff View: Improved performance of InGaN/GaN LED by optimizing the properties of the bulk and interface of ITO on p-GaN

Improved performance of InGaN/GaN LED by optimizing the properties of the bulk and interface of ITO on p-GaN

Indium Tin Oxide films were deposited directly on p-type Gallium Nitride film using the electron beam deposition method at different substrate temperatures from 25 °C to 550 °C. The structural, optical and Hall measurements represent a direct correlation of ITO properties with the substrate temperat...

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Main Authors:	Zahir, Norhilmi Mohd, Talik, Noor Azrina, Harun, Hazmi Naim, Kamarundzaman, Anas, Tunmee, Sarayut, Nakajima, Hideki, Chanlek, Narong, Shuhaimi, Ahmad, Abd Majid, Wan Haliza
Format:	Article
Published:	Elsevier 2021
Subjects:	QC Physics
Online Access:	http://eprints.um.edu.my/25889/ https://doi.org/10.1016/j.apsusc.2020.148406
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spelling	my.um.eprints.258892021-04-28T01:23:17Z http://eprints.um.edu.my/25889/ Improved performance of InGaN/GaN LED by optimizing the properties of the bulk and interface of ITO on p-GaN Zahir, Norhilmi Mohd Talik, Noor Azrina Harun, Hazmi Naim Kamarundzaman, Anas Tunmee, Sarayut Nakajima, Hideki Chanlek, Narong Shuhaimi, Ahmad Abd Majid, Wan Haliza QC Physics Indium Tin Oxide films were deposited directly on p-type Gallium Nitride film using the electron beam deposition method at different substrate temperatures from 25 °C to 550 °C. The structural, optical and Hall measurements represent a direct correlation of ITO properties with the substrate temperature during deposition. The substrate temperature of 450 °C produces the best ITO/p-GaN properties for the InGaN/GaN Light Emitting Diode performance, which outperforms the 550 °C device, although the latter exhibits better optical characteristics. At 100 mA, the 450 °C LED exhibits the highest power efficiency of 9.32 mW with an operation voltage of 6.96 V. X-ray Photoemission Spectroscopy measurement shows that substitution of Sn4+ occurs inside the In2O3 structure, which reaches its limit at the 450 °C substrate temperature. This result manifests the crucial role of the surface chemistry effect on the current injection into the LED. Additionally, the band offset of ITO/p-GaN interface data shows that the interface of the 450 °C sample exhibits the highest conduction band offset of 1.93 eV. For the metal/ITO junction, the 450 °C sample experiences the lowest Conduction Band Maximum of 0.69 eV, which ultimately helps to enhance the carrier injection from the anode part in the device. © 2020 Elsevier B.V. Elsevier 2021 Article PeerReviewed Zahir, Norhilmi Mohd and Talik, Noor Azrina and Harun, Hazmi Naim and Kamarundzaman, Anas and Tunmee, Sarayut and Nakajima, Hideki and Chanlek, Narong and Shuhaimi, Ahmad and Abd Majid, Wan Haliza (2021) Improved performance of InGaN/GaN LED by optimizing the properties of the bulk and interface of ITO on p-GaN. Applied Surface Science, 540. p. 148406. ISSN 0169-4332 https://doi.org/10.1016/j.apsusc.2020.148406 doi:10.1016/j.apsusc.2020.148406
institution	Universiti Malaya
building	UM Library
collection	Institutional Repository
continent	Asia
country	Malaysia
content_provider	Universiti Malaya
content_source	UM Research Repository
url_provider	http://eprints.um.edu.my/
topic	QC Physics
spellingShingle	QC Physics Zahir, Norhilmi Mohd Talik, Noor Azrina Harun, Hazmi Naim Kamarundzaman, Anas Tunmee, Sarayut Nakajima, Hideki Chanlek, Narong Shuhaimi, Ahmad Abd Majid, Wan Haliza Improved performance of InGaN/GaN LED by optimizing the properties of the bulk and interface of ITO on p-GaN
description	Indium Tin Oxide films were deposited directly on p-type Gallium Nitride film using the electron beam deposition method at different substrate temperatures from 25 °C to 550 °C. The structural, optical and Hall measurements represent a direct correlation of ITO properties with the substrate temperature during deposition. The substrate temperature of 450 °C produces the best ITO/p-GaN properties for the InGaN/GaN Light Emitting Diode performance, which outperforms the 550 °C device, although the latter exhibits better optical characteristics. At 100 mA, the 450 °C LED exhibits the highest power efficiency of 9.32 mW with an operation voltage of 6.96 V. X-ray Photoemission Spectroscopy measurement shows that substitution of Sn4+ occurs inside the In2O3 structure, which reaches its limit at the 450 °C substrate temperature. This result manifests the crucial role of the surface chemistry effect on the current injection into the LED. Additionally, the band offset of ITO/p-GaN interface data shows that the interface of the 450 °C sample exhibits the highest conduction band offset of 1.93 eV. For the metal/ITO junction, the 450 °C sample experiences the lowest Conduction Band Maximum of 0.69 eV, which ultimately helps to enhance the carrier injection from the anode part in the device. © 2020 Elsevier B.V.
format	Article
author	Zahir, Norhilmi Mohd Talik, Noor Azrina Harun, Hazmi Naim Kamarundzaman, Anas Tunmee, Sarayut Nakajima, Hideki Chanlek, Narong Shuhaimi, Ahmad Abd Majid, Wan Haliza
author_facet	Zahir, Norhilmi Mohd Talik, Noor Azrina Harun, Hazmi Naim Kamarundzaman, Anas Tunmee, Sarayut Nakajima, Hideki Chanlek, Narong Shuhaimi, Ahmad Abd Majid, Wan Haliza
author_sort	Zahir, Norhilmi Mohd
title	Improved performance of InGaN/GaN LED by optimizing the properties of the bulk and interface of ITO on p-GaN
title_short	Improved performance of InGaN/GaN LED by optimizing the properties of the bulk and interface of ITO on p-GaN
title_full	Improved performance of InGaN/GaN LED by optimizing the properties of the bulk and interface of ITO on p-GaN
title_fullStr	Improved performance of InGaN/GaN LED by optimizing the properties of the bulk and interface of ITO on p-GaN
title_full_unstemmed	Improved performance of InGaN/GaN LED by optimizing the properties of the bulk and interface of ITO on p-GaN
title_sort	improved performance of ingan/gan led by optimizing the properties of the bulk and interface of ito on p-gan
publisher	Elsevier
publishDate	2021
url	http://eprints.um.edu.my/25889/ https://doi.org/10.1016/j.apsusc.2020.148406
_version_	1698697320514715648
score	13.211869

Improved performance of InGaN/GaN LED by optimizing the properties of the bulk and interface of ITO on p-GaN

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