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Effects of pulse cycle number on the quality of pulsed atomic-layer epitaxy AlN films grown via metal organic chemical vapor deposition

The effect of different numbers of Al and N2 pulse cycles on the quality of AlN films prepared via the pulsed atomic-layer epitaxy (PALE) technique and epitaxially deposited on a c-plane sapphire substrate by metal organic chemical vapor deposition were investigated. The characteristics of AlN/sapph...

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Bibliographic Details
Main Authors:	Rahman, Mohd Nazri Abd, Sulaiman, Abdullah Fadil, Abdul Khudus, Muhammad Imran Mustafa, Allif, Kamarul, Talik, Noor Azrina, Basri, Siti Hajar, Shuhaimi, Ahmad
Format:	Article
Published:	IOP Publishing 2019
Subjects:	Q Science (General) QC Physics
Online Access:	http://eprints.um.edu.my/23703/ https://doi.org/10.7567/1347-4065/ab09d3
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