Staff View: Design optimisation of high sensitivity MEMS piezoresistive intracranial pressure sensor using Taguchi approach

Design optimisation of high sensitivity MEMS piezoresistive intracranial pressure sensor using Taguchi approach

MEMS piezoresistive pressure sensors have been contemporarily used to measure intracranial pressure. Since an intracranial signal is of the pulsating type, the microsensor must be very sensitive to detect these changes. The sensitivity of the existing MEMS piezoresistive intracranial pressure sensor...

Full description

Saved in:

Bibliographic Details
Main Authors:	Mohamad, Mazita, Soin, Norhayati, Ibrahim, Fatimah
Format:	Article
Published:	Springer Verlag 2018
Subjects:	R Medicine TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://eprints.um.edu.my/21268/ https://doi.org/10.1007/s00542-017-3699-8
Tags:	Add Tag No Tags, Be the first to tag this record!

id	my.um.eprints.21268
record_format	eprints
spelling	my.um.eprints.212682019-05-21T06:20:44Z http://eprints.um.edu.my/21268/ Design optimisation of high sensitivity MEMS piezoresistive intracranial pressure sensor using Taguchi approach Mohamad, Mazita Soin, Norhayati Ibrahim, Fatimah R Medicine TK Electrical engineering. Electronics Nuclear engineering MEMS piezoresistive pressure sensors have been contemporarily used to measure intracranial pressure. Since an intracranial signal is of the pulsating type, the microsensor must be very sensitive to detect these changes. The sensitivity of the existing MEMS piezoresistive intracranial pressure sensors are in the range of 2 µV/V/mmHg to 0.17 mV/V/mmHg. Factors influencing the sensitivity and linearity of the sensor include the diaphragm thickness, the shape and placement of the piezoresistors, and the doping concentration. This paper will discuss the incorporation of these factors, which were tested to obtain higher sensitivity silicon-based piezoresistive intracranial pressure sensor, while maintaining the linearity of the sensor. In order to achieve this objective, the Taguchi robust design method of L27 orthogonal array was employed. The sensing outputs of these designs, with different combinations of factors were determined through simulations using COMSOL Multiphysics. The results indicated that the diaphragm thickness and perpendicular piezoresistors play important roles in the sensitivity performance of the MEMS piezoresistive intracranial pressure sensor. The findings also showed that the doping concentration of the piezoresistors have significant effect on the linearity performance of the sensor. Consequently, the design that consolidated the 3-turns (perpendicular) and 0-turn (parallel) meander shaped piezoresistors of 1017 cm−3 dopant concentration on a 2 μm diaphragm thickness was found to be the optimum design, with sensitivity of 0.1272 mV/V/mmHg and linearity of 99%. This design has been proven to be an improved version for the small diaphragm piezoresistive intracranial pressure sensor. Springer Verlag 2018 Article PeerReviewed Mohamad, Mazita and Soin, Norhayati and Ibrahim, Fatimah (2018) Design optimisation of high sensitivity MEMS piezoresistive intracranial pressure sensor using Taguchi approach. Microsystem Technologies, 24 (6). pp. 2637-2652. ISSN 0946-7076 https://doi.org/10.1007/s00542-017-3699-8 doi:10.1007/s00542-017-3699-8
institution	Universiti Malaya
building	UM Library
collection	Institutional Repository
continent	Asia
country	Malaysia
content_provider	Universiti Malaya
content_source	UM Research Repository
url_provider	http://eprints.um.edu.my/
topic	R Medicine TK Electrical engineering. Electronics Nuclear engineering
spellingShingle	R Medicine TK Electrical engineering. Electronics Nuclear engineering Mohamad, Mazita Soin, Norhayati Ibrahim, Fatimah Design optimisation of high sensitivity MEMS piezoresistive intracranial pressure sensor using Taguchi approach
description	MEMS piezoresistive pressure sensors have been contemporarily used to measure intracranial pressure. Since an intracranial signal is of the pulsating type, the microsensor must be very sensitive to detect these changes. The sensitivity of the existing MEMS piezoresistive intracranial pressure sensors are in the range of 2 µV/V/mmHg to 0.17 mV/V/mmHg. Factors influencing the sensitivity and linearity of the sensor include the diaphragm thickness, the shape and placement of the piezoresistors, and the doping concentration. This paper will discuss the incorporation of these factors, which were tested to obtain higher sensitivity silicon-based piezoresistive intracranial pressure sensor, while maintaining the linearity of the sensor. In order to achieve this objective, the Taguchi robust design method of L27 orthogonal array was employed. The sensing outputs of these designs, with different combinations of factors were determined through simulations using COMSOL Multiphysics. The results indicated that the diaphragm thickness and perpendicular piezoresistors play important roles in the sensitivity performance of the MEMS piezoresistive intracranial pressure sensor. The findings also showed that the doping concentration of the piezoresistors have significant effect on the linearity performance of the sensor. Consequently, the design that consolidated the 3-turns (perpendicular) and 0-turn (parallel) meander shaped piezoresistors of 1017 cm−3 dopant concentration on a 2 μm diaphragm thickness was found to be the optimum design, with sensitivity of 0.1272 mV/V/mmHg and linearity of 99%. This design has been proven to be an improved version for the small diaphragm piezoresistive intracranial pressure sensor.
format	Article
author	Mohamad, Mazita Soin, Norhayati Ibrahim, Fatimah
author_facet	Mohamad, Mazita Soin, Norhayati Ibrahim, Fatimah
author_sort	Mohamad, Mazita
title	Design optimisation of high sensitivity MEMS piezoresistive intracranial pressure sensor using Taguchi approach
title_short	Design optimisation of high sensitivity MEMS piezoresistive intracranial pressure sensor using Taguchi approach
title_full	Design optimisation of high sensitivity MEMS piezoresistive intracranial pressure sensor using Taguchi approach
title_fullStr	Design optimisation of high sensitivity MEMS piezoresistive intracranial pressure sensor using Taguchi approach
title_full_unstemmed	Design optimisation of high sensitivity MEMS piezoresistive intracranial pressure sensor using Taguchi approach
title_sort	design optimisation of high sensitivity mems piezoresistive intracranial pressure sensor using taguchi approach
publisher	Springer Verlag
publishDate	2018
url	http://eprints.um.edu.my/21268/ https://doi.org/10.1007/s00542-017-3699-8
_version_	1643691515194638336
score	13.211869

Design optimisation of high sensitivity MEMS piezoresistive intracranial pressure sensor using Taguchi approach

Similar Items