Effect of low NH3 flux towards high quality semi-polar (11-22) GaN on m-plane sapphire via MOCVD
The effect of ammonia flux towards the quality of the semi-polar (11-22) gallium nitride thin film on m-plane (10-10) sapphire is presented. Semi-polar (11-22) gallium nitride epi-layers were obtained using a two-step growth method, consisting of high temperature aluminum nitride followed by gallium...
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| Main Authors: | , , , , , , |
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| 格式: | Article |
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Elsevier
2018
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| 在線閱讀: | http://eprints.um.edu.my/21081/ https://doi.org/10.1016/j.spmi.2018.03.038 |
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