Staff View: Effect of low NH3 flux towards high quality semi-polar (11-22) GaN on m-plane sapphire via MOCVD

Effect of low NH3 flux towards high quality semi-polar (11-22) GaN on m-plane sapphire via MOCVD

The effect of ammonia flux towards the quality of the semi-polar (11-22) gallium nitride thin film on m-plane (10-10) sapphire is presented. Semi-polar (11-22) gallium nitride epi-layers were obtained using a two-step growth method, consisting of high temperature aluminum nitride followed by gallium...

Full description

Saved in:

Bibliographic Details
Main Authors:	Omar, Al-Zuhairi, Shuhaimi, Ahmad, Makinudin, Abdullah Haaziq Ahmad, Abdul Khudus, Muhammad Imran Mustafa, Azman, Adreen, Kamarundzaman, Anas, Supangat, Azzuliani
Format:	Article
Published:	Elsevier 2018
Subjects:	Q Science (General) QC Physics
Online Access:	http://eprints.um.edu.my/21081/ https://doi.org/10.1016/j.spmi.2018.03.038
Tags:	Add Tag No Tags, Be the first to tag this record!

id	my.um.eprints.21081
record_format	eprints
spelling	my.um.eprints.210812019-04-26T07:44:09Z http://eprints.um.edu.my/21081/ Effect of low NH3 flux towards high quality semi-polar (11-22) GaN on m-plane sapphire via MOCVD Omar, Al-Zuhairi Shuhaimi, Ahmad Makinudin, Abdullah Haaziq Ahmad Abdul Khudus, Muhammad Imran Mustafa Azman, Adreen Kamarundzaman, Anas Supangat, Azzuliani Q Science (General) QC Physics The effect of ammonia flux towards the quality of the semi-polar (11-22) gallium nitride thin film on m-plane (10-10) sapphire is presented. Semi-polar (11-22) gallium nitride epi-layers were obtained using a two-step growth method, consisting of high temperature aluminum nitride followed by gallium nitride via metal organic chemical vapor deposition. The surface morphology analysis via field emission scanning electron microscopy and atomic force microscopy of the semi-polar (11-22) gallium nitride has shown that low ammonia flux promotes two-dimensional growth with low surface roughness of 4.08 nm. A dominant diffraction peak of (11-22) gallium nitride was also observed via X-ray diffraction upon utilizing low ammonia flux. The on- and off-axis X-ray rocking curve measurements illustrate the enhancement of the crystal quality, which might result from the reduction of the basal stacking faults and perfect dislocation. The full width half maximum values were reduced by at least 15% for both on- and off-axis measurements. Elsevier 2018 Article PeerReviewed Omar, Al-Zuhairi and Shuhaimi, Ahmad and Makinudin, Abdullah Haaziq Ahmad and Abdul Khudus, Muhammad Imran Mustafa and Azman, Adreen and Kamarundzaman, Anas and Supangat, Azzuliani (2018) Effect of low NH3 flux towards high quality semi-polar (11-22) GaN on m-plane sapphire via MOCVD. Superlattices and Microstructures, 117. pp. 207-214. ISSN 0749-6036 https://doi.org/10.1016/j.spmi.2018.03.038 doi:10.1016/j.spmi.2018.03.038
institution	Universiti Malaya
building	UM Library
collection	Institutional Repository
continent	Asia
country	Malaysia
content_provider	Universiti Malaya
content_source	UM Research Repository
url_provider	http://eprints.um.edu.my/
topic	Q Science (General) QC Physics
spellingShingle	Q Science (General) QC Physics Omar, Al-Zuhairi Shuhaimi, Ahmad Makinudin, Abdullah Haaziq Ahmad Abdul Khudus, Muhammad Imran Mustafa Azman, Adreen Kamarundzaman, Anas Supangat, Azzuliani Effect of low NH3 flux towards high quality semi-polar (11-22) GaN on m-plane sapphire via MOCVD
description	The effect of ammonia flux towards the quality of the semi-polar (11-22) gallium nitride thin film on m-plane (10-10) sapphire is presented. Semi-polar (11-22) gallium nitride epi-layers were obtained using a two-step growth method, consisting of high temperature aluminum nitride followed by gallium nitride via metal organic chemical vapor deposition. The surface morphology analysis via field emission scanning electron microscopy and atomic force microscopy of the semi-polar (11-22) gallium nitride has shown that low ammonia flux promotes two-dimensional growth with low surface roughness of 4.08 nm. A dominant diffraction peak of (11-22) gallium nitride was also observed via X-ray diffraction upon utilizing low ammonia flux. The on- and off-axis X-ray rocking curve measurements illustrate the enhancement of the crystal quality, which might result from the reduction of the basal stacking faults and perfect dislocation. The full width half maximum values were reduced by at least 15% for both on- and off-axis measurements.
format	Article
author	Omar, Al-Zuhairi Shuhaimi, Ahmad Makinudin, Abdullah Haaziq Ahmad Abdul Khudus, Muhammad Imran Mustafa Azman, Adreen Kamarundzaman, Anas Supangat, Azzuliani
author_facet	Omar, Al-Zuhairi Shuhaimi, Ahmad Makinudin, Abdullah Haaziq Ahmad Abdul Khudus, Muhammad Imran Mustafa Azman, Adreen Kamarundzaman, Anas Supangat, Azzuliani
author_sort	Omar, Al-Zuhairi
title	Effect of low NH3 flux towards high quality semi-polar (11-22) GaN on m-plane sapphire via MOCVD
title_short	Effect of low NH3 flux towards high quality semi-polar (11-22) GaN on m-plane sapphire via MOCVD
title_full	Effect of low NH3 flux towards high quality semi-polar (11-22) GaN on m-plane sapphire via MOCVD
title_fullStr	Effect of low NH3 flux towards high quality semi-polar (11-22) GaN on m-plane sapphire via MOCVD
title_full_unstemmed	Effect of low NH3 flux towards high quality semi-polar (11-22) GaN on m-plane sapphire via MOCVD
title_sort	effect of low nh3 flux towards high quality semi-polar (11-22) gan on m-plane sapphire via mocvd
publisher	Elsevier
publishDate	2018
url	http://eprints.um.edu.my/21081/ https://doi.org/10.1016/j.spmi.2018.03.038
_version_	1643691460687560704
score	13.244367

Effect of low NH3 flux towards high quality semi-polar (11-22) GaN on m-plane sapphire via MOCVD

Similar Items