Mechanical properties of interfacial phases between Sn-3.5 Ag solder and Ni-18 at. W barrier film by nanoindentation

Purpose - The purpose of this paper is to investigate the hardness and elastic modulus on interfacial phases formed between Sn-3.5Ag solder and Ni-18 at. W alloy film by nanoindentation. It has been found that a ternary amorphous Sn-Ni-W layer formed below Ni3Sn4 IMC at the interface. In this study...

وصف كامل

محفوظ في:
التفاصيل البيبلوغرافية
المؤلفون الرئيسيون: Chew, C.S., Durairaj, R., Haseeb, A.S. Md. Abdul, Beake, B.
التنسيق: مقال
اللغة:English
منشور في: Emerald 2015
الموضوعات:
الوصول للمادة أونلاين:http://eprints.um.edu.my/15662/1/Mechanical_properties_of_interfacial_phases_between_Sn-3.5_Ag_solder_and_Ni-18_at..pdf
http://eprints.um.edu.my/15662/
http://www.emeraldinsight.com/doi/full/10.1108/SSMT-01-2015-0001
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الوصف
الملخص:Purpose - The purpose of this paper is to investigate the hardness and elastic modulus on interfacial phases formed between Sn-3.5Ag solder and Ni-18 at. W alloy film by nanoindentation. It has been found that a ternary amorphous Sn-Ni-W layer formed below Ni3Sn4 IMC at the interface. In this study, mechanical properties of the IMC formed between SA solder and Ni-18 at. W film after six times reflows were performed by nanoindentation. Design/methodology/approach - The characterization was carried at 25 degrees C, and 100 indents were generated. The elastic modulus and hardness were investigated. Findings - The results showed that hardness of Ni3Sn4 IMC was higher than amorphous Sn-Ni-W phase. A slight bigger indent was observed on the Sn-Ni-W layer compared with that on the Ni3Sn4 IMC. Lower topographical height in the Sn-Ni-W layer indicated that the Sn-Ni-W phase was softer compared with the Ni3Sn4 IMC. The lower hardness and soft Sn-Ni-W phase is significantly related to the amorphous structure that formed through solid-state amorphization. Originality/value - There are no publications about the indentation on the interfacial between the Ni-W layer and the Sn-Ag solder.