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Formation of Zr- oxynitride thin films on 4H-SiC substrate

Formation of Zr-oxynitride by simultaneous oxidation and nitridation in nitrous oxide of sputtered Zr on SiC substrate is reported. Sputtered Zr on SiC substrate and followed by oxidation and nitridation in nitrous oxide ambient for 15 min at different temperatures (400–900 °C) have been systematica...

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Main Authors: Wong, Y.H., Cheong, K.Y.
Format: Article
Published: Elsevier 2012
Subjects:
TA Engineering (General). Civil engineering (General)
Online Access:http://eprints.um.edu.my/13001/
http://www.sciencedirect.com/science/article/pii/S0040609012008851
http://dx.doi.org/10.1016/j.tsf.2012.07.036
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spelling my.um.eprints.130012015-03-11T03:14:34Z http://eprints.um.edu.my/13001/ Formation of Zr- oxynitride thin films on 4H-SiC substrate Wong, Y.H. Cheong, K.Y. TA Engineering (General). Civil engineering (General) Formation of Zr-oxynitride by simultaneous oxidation and nitridation in nitrous oxide of sputtered Zr on SiC substrate is reported. Sputtered Zr on SiC substrate and followed by oxidation and nitridation in nitrous oxide ambient for 15 min at different temperatures (400–900 °C) have been systematically investigated. By using X-ray photoelectron spectroscopy, chemical compositions, and depth profile analysis have been evaluated, as well as energy band alignment of Zr-oxynitride/interfacial layer/SiC system. Zr-oxynitride film of Zr–O, Zr–N, and/or Zr–O–N and its interfacial layer composed of mixed Zr–O, Zr–N, Zr–O–N, Zr–Si–O, Si–N, and/or C–N phases were verified. A possible model related to the oxidation and nitridation mechanisms has been proposed and explicated. Elsevier 2012-09-01 Article PeerReviewed Wong, Y.H. and Cheong, K.Y. (2012) Formation of Zr- oxynitride thin films on 4H-SiC substrate. Thin Solid Films, 520 (22). pp. 6822-6829. ISSN 0040-6090 http://www.sciencedirect.com/science/article/pii/S0040609012008851 http://dx.doi.org/10.1016/j.tsf.2012.07.036
institution Universiti Malaya
building UM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaya
content_source UM Research Repository
url_provider http://eprints.um.edu.my/
topic TA Engineering (General). Civil engineering (General)
spellingShingle TA Engineering (General). Civil engineering (General)
Wong, Y.H.
Cheong, K.Y.
Formation of Zr- oxynitride thin films on 4H-SiC substrate
description Formation of Zr-oxynitride by simultaneous oxidation and nitridation in nitrous oxide of sputtered Zr on SiC substrate is reported. Sputtered Zr on SiC substrate and followed by oxidation and nitridation in nitrous oxide ambient for 15 min at different temperatures (400–900 °C) have been systematically investigated. By using X-ray photoelectron spectroscopy, chemical compositions, and depth profile analysis have been evaluated, as well as energy band alignment of Zr-oxynitride/interfacial layer/SiC system. Zr-oxynitride film of Zr–O, Zr–N, and/or Zr–O–N and its interfacial layer composed of mixed Zr–O, Zr–N, Zr–O–N, Zr–Si–O, Si–N, and/or C–N phases were verified. A possible model related to the oxidation and nitridation mechanisms has been proposed and explicated.
format Article
author Wong, Y.H.
Cheong, K.Y.
author_facet Wong, Y.H.
Cheong, K.Y.
author_sort Wong, Y.H.
title Formation of Zr- oxynitride thin films on 4H-SiC substrate
title_short Formation of Zr- oxynitride thin films on 4H-SiC substrate
title_full Formation of Zr- oxynitride thin films on 4H-SiC substrate
title_fullStr Formation of Zr- oxynitride thin films on 4H-SiC substrate
title_full_unstemmed Formation of Zr- oxynitride thin films on 4H-SiC substrate
title_sort formation of zr- oxynitride thin films on 4h-sic substrate
publisher Elsevier
publishDate 2012
url http://eprints.um.edu.my/13001/
http://www.sciencedirect.com/science/article/pii/S0040609012008851
http://dx.doi.org/10.1016/j.tsf.2012.07.036
_version_ 1643689434688782336
score 13.211869

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