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Characterization and fabrication of 90nm PMOS with strained silicon using TCAD silvaco / Mohd Ariff Ab Hamid

This paper is looking into the enhancement of conventional 90nm PMOS by using graded silicon germanium layer (SiGe) within the channel and bulk of semiconductor.The performance of conventional 90nm PMOS and 90nm PMOS with silicon germanium layer was compared. A process simulation of Strained Silicon...

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Main Author: Ab Hamid, Mohd Ariff
Format: Thesis
Language:English
Published: 2009
Subjects:
Nanotechnology
TK Electrical engineering. Electronics. Nuclear engineering
Online Access:https://ir.uitm.edu.my/id/eprint/98852/1/98852.pdf
https://ir.uitm.edu.my/id/eprint/98852/
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spelling my.uitm.ir.988522025-02-07T07:00:12Z https://ir.uitm.edu.my/id/eprint/98852/ Characterization and fabrication of 90nm PMOS with strained silicon using TCAD silvaco / Mohd Ariff Ab Hamid Ab Hamid, Mohd Ariff Nanotechnology TK Electrical engineering. Electronics. Nuclear engineering This paper is looking into the enhancement of conventional 90nm PMOS by using graded silicon germanium layer (SiGe) within the channel and bulk of semiconductor.The performance of conventional 90nm PMOS and 90nm PMOS with silicon germanium layer was compared. A process simulation of Strained Silicon PMOS and its electrical characterization was done using TCAD tool. The analysis focused on Id-Vg, Id-Vd characteristic, and hole mobility changes. With the Germanium concentration of 35%, the threshold voltage Vt for the strained Si and conventional PMOS is -0.228035V and - 0.437378V respectively. This indicates that the strained silicon had lower power consumption. In addition, the output characteristics were also obtained for Strain Silicon PMOS which showed an improvement of drain current compared with conventional PMOS. The results were obtained from ATHENA and ATLAS simulator. 2009 Thesis NonPeerReviewed text en https://ir.uitm.edu.my/id/eprint/98852/1/98852.pdf Characterization and fabrication of 90nm PMOS with strained silicon using TCAD silvaco / Mohd Ariff Ab Hamid. (2009) Degree thesis, thesis, Universiti Teknologi MARA (UiTM). <http://terminalib.uitm.edu.my/98852.pdf>
institution Universiti Teknologi Mara
building Tun Abdul Razak Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Mara
content_source UiTM Institutional Repository
url_provider http://ir.uitm.edu.my/
language English
topic Nanotechnology
TK Electrical engineering. Electronics. Nuclear engineering
spellingShingle Nanotechnology
TK Electrical engineering. Electronics. Nuclear engineering
Ab Hamid, Mohd Ariff
Characterization and fabrication of 90nm PMOS with strained silicon using TCAD silvaco / Mohd Ariff Ab Hamid
description This paper is looking into the enhancement of conventional 90nm PMOS by using graded silicon germanium layer (SiGe) within the channel and bulk of semiconductor.The performance of conventional 90nm PMOS and 90nm PMOS with silicon germanium layer was compared. A process simulation of Strained Silicon PMOS and its electrical characterization was done using TCAD tool. The analysis focused on Id-Vg, Id-Vd characteristic, and hole mobility changes. With the Germanium concentration of 35%, the threshold voltage Vt for the strained Si and conventional PMOS is -0.228035V and - 0.437378V respectively. This indicates that the strained silicon had lower power consumption. In addition, the output characteristics were also obtained for Strain Silicon PMOS which showed an improvement of drain current compared with conventional PMOS. The results were obtained from ATHENA and ATLAS simulator.
format Thesis
author Ab Hamid, Mohd Ariff
author_facet Ab Hamid, Mohd Ariff
author_sort Ab Hamid, Mohd Ariff
title Characterization and fabrication of 90nm PMOS with strained silicon using TCAD silvaco / Mohd Ariff Ab Hamid
title_short Characterization and fabrication of 90nm PMOS with strained silicon using TCAD silvaco / Mohd Ariff Ab Hamid
title_full Characterization and fabrication of 90nm PMOS with strained silicon using TCAD silvaco / Mohd Ariff Ab Hamid
title_fullStr Characterization and fabrication of 90nm PMOS with strained silicon using TCAD silvaco / Mohd Ariff Ab Hamid
title_full_unstemmed Characterization and fabrication of 90nm PMOS with strained silicon using TCAD silvaco / Mohd Ariff Ab Hamid
title_sort characterization and fabrication of 90nm pmos with strained silicon using tcad silvaco / mohd ariff ab hamid
publishDate 2009
url https://ir.uitm.edu.my/id/eprint/98852/1/98852.pdf
https://ir.uitm.edu.my/id/eprint/98852/
_version_ 1823540785167990784
score 13.244109

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