Co relation study of gate oxide thickness and MOSFET I-V characteristic / Nurul Arina Zahaimi
A MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a semiconductor device. A MOSFET is most commonly used in the field of power electronics. Silicon dioxide (Si02) is the gate component on N-type Metal Oxide Semiconductor (NMOS) which plays a very important role in transistor operation....
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Main Author: | Zahaimi, Nurul Arina |
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Format: | Thesis |
Language: | English |
Published: |
2011
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Subjects: | |
Online Access: | https://ir.uitm.edu.my/id/eprint/45468/1/45468.pdf https://ir.uitm.edu.my/id/eprint/45468/ |
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