Effects of annealing temperature and time on the P-Type silicon wafer with Boron & Phosphorus dopants / Nurul Nadia Che Manaf
This project is study on annealing of temperature and time variation on P type silicon wafer by using dopants of Phosphorus and Boron. The properties that being analyses are sheet resistivity and conductivity of sample after diffusion process. Conductivity is a property which describes the ability o...
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| Format: | Student Project |
| Language: | English |
| Published: |
2010
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| Online Access: | https://ir.uitm.edu.my/id/eprint/46370/1/46370.pdf https://ir.uitm.edu.my/id/eprint/46370/ |
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