Thermaly Stimulated Current (TSC) in porous silicon / Muhamad Shahril Zakaria
Charge trapping and detrapping within Porous Silicon (PSi) may easily occur due to numerous imperfections in its lattice. This is explained by the fact that heterogeneity at the interface between Si and PSi is the source of numerous discontinuities and imperfections in the Si crystals in addition to...
Saved in:
| Main Author: | |
|---|---|
| Format: | Student Project |
| Language: | English |
| Published: |
2011
|
| Subjects: | |
| Online Access: | https://ir.uitm.edu.my/id/eprint/44528/1/44528.pdf https://ir.uitm.edu.my/id/eprint/44528/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Be the first to leave a comment!