Thermaly Stimulated Current (TSC) in porous silicon / Muhamad Shahril Zakaria
Charge trapping and detrapping within Porous Silicon (PSi) may easily occur due to numerous imperfections in its lattice. This is explained by the fact that heterogeneity at the interface between Si and PSi is the source of numerous discontinuities and imperfections in the Si crystals in addition to...
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| フォーマット: | Student Project |
| 言語: | English |
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2011
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| オンライン･アクセス: | https://ir.uitm.edu.my/id/eprint/44528/1/44528.pdf https://ir.uitm.edu.my/id/eprint/44528/ |
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