Thermaly Stimulated Current (TSC) in porous silicon / Muhamad Shahril Zakaria

Charge trapping and detrapping within Porous Silicon (PSi) may easily occur due to numerous imperfections in its lattice. This is explained by the fact that heterogeneity at the interface between Si and PSi is the source of numerous discontinuities and imperfections in the Si crystals in addition to...

詳細記述

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書誌詳細
第一著者: Zakaria, Muhamad Shahril
フォーマット: Student Project
言語:English
出版事項: 2011
主題:
オンライン・アクセス:https://ir.uitm.edu.my/id/eprint/44528/1/44528.pdf
https://ir.uitm.edu.my/id/eprint/44528/
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