Thermaly Stimulated Current (TSC) in porous silicon / Muhamad Shahril Zakaria

Charge trapping and detrapping within Porous Silicon (PSi) may easily occur due to numerous imperfections in its lattice. This is explained by the fact that heterogeneity at the interface between Si and PSi is the source of numerous discontinuities and imperfections in the Si crystals in addition to...

全面介紹

Saved in:
書目詳細資料
主要作者: Zakaria, Muhamad Shahril
格式: Student Project
語言:English
出版: 2011
主題:
在線閱讀:https://ir.uitm.edu.my/id/eprint/44528/1/44528.pdf
https://ir.uitm.edu.my/id/eprint/44528/
標簽: 添加標簽
沒有標簽, 成為第一個標記此記錄!

相似書籍