Thermaly Stimulated Current (TSC) in porous silicon / Muhamad Shahril Zakaria
Charge trapping and detrapping within Porous Silicon (PSi) may easily occur due to numerous imperfections in its lattice. This is explained by the fact that heterogeneity at the interface between Si and PSi is the source of numerous discontinuities and imperfections in the Si crystals in addition to...
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第一著者: | Zakaria, Muhamad Shahril |
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フォーマット: | Student Project |
言語: | English |
出版事項: |
2011
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主題: | |
オンライン・アクセス: | https://ir.uitm.edu.my/id/eprint/44528/1/44528.pdf https://ir.uitm.edu.my/id/eprint/44528/ |
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