Doping effect on bandgap energy and luminescence spectrum for AlN-based semiconductor
This ongoing work reports the heavy doping effect on the Aluminum Nitride (AlN) semiconductor (SC) material, illustrated via its energy-band structure (EBS). The research correlates the bandgap energy (BE) and depletion region (DR), which are then applied to the estimation of light-emitting diode (L...
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| Main Authors: | , , , , |
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| Format: | Proceeding Paper |
| Language: | English English |
| Published: |
Springer Science and Business Media Deutschland GmbH
2022
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/99956/1/99956_Doping%20effect%20on%20bandgap%20energy.pdf http://irep.iium.edu.my/99956/2/99956_Doping%20effect%20on%20bandgap%20energy_SCOPUS.pdf http://irep.iium.edu.my/99956/ https://link.springer.com/chapter/10.1007/978-981-16-8903-1_5 |
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