Cover Image

Doping effect on bandgap energy and luminescence spectrum for AlN-based semiconductor

This ongoing work reports the heavy doping effect on the Aluminum Nitride (AlN) semiconductor (SC) material, illustrated via its energy-band structure (EBS). The research correlates the bandgap energy (BE) and depletion region (DR), which are then applied to the estimation of light-emitting diode (L...

Full description

Saved in:
Bibliographic Details
Main Authors: Faris Azim Ahmad Fajri, Faris Azim, Hairol Aman, Mohammad Amirul, Ahmad Noorden, Ahmad Fakhrurrazi, Abdul Hamid, Ahmad Noor, Abdul Aziz, Azni
Format: Proceeding Paper
Language:English
English
Published: Springer Science and Business Media Deutschland GmbH 2022
Subjects:
QC Physics
Online Access:http://irep.iium.edu.my/99956/1/99956_Doping%20effect%20on%20bandgap%20energy.pdf
http://irep.iium.edu.my/99956/2/99956_Doping%20effect%20on%20bandgap%20energy_SCOPUS.pdf
http://irep.iium.edu.my/99956/
https://link.springer.com/chapter/10.1007/978-981-16-8903-1_5
Tags: Add Tag
No Tags, Be the first to tag this record!
id my.iium.irep.99956
record_format dspace
spelling my.iium.irep.999562024-09-10T04:02:11Z http://irep.iium.edu.my/99956/ Doping effect on bandgap energy and luminescence spectrum for AlN-based semiconductor Faris Azim Ahmad Fajri, Faris Azim Hairol Aman, Mohammad Amirul Ahmad Noorden, Ahmad Fakhrurrazi Abdul Hamid, Ahmad Noor Abdul Aziz, Azni QC Physics This ongoing work reports the heavy doping effect on the Aluminum Nitride (AlN) semiconductor (SC) material, illustrated via its energy-band structure (EBS). The research correlates the bandgap energy (BE) and depletion region (DR), which are then applied to the estimation of light-emitting diode (LED) luminescence spectrum (LS). The measurements are compared with different dopant concentrations (1 × 1018 cm−3 –1 × 1021 cm−3). Having the Gallium Arsenide (GaAs) properties as the controlled variable, the EBS is validated with literature findings. The measured band gap energy of AlN shifts from 6.2435 to 6.2326 eV. It decreased as the dopant concentration increased. However, the active spatial regions, reduced from (1.0250 × 10−1 to 4.5000 × 10−3 µm) × 1 µm2. The findings are compared with the output LS of LED using the same SC material. The changes in BE and DR are consistent with the LS peak intensity wavelength and relative intensity to all the chosen doping concentrations. Though acquiring this consistency, an extensive discussion with collaboration in material science studies will further strengthen the understanding regarding these behaviours. Springer Science and Business Media Deutschland GmbH 2022 Proceeding Paper PeerReviewed application/pdf en http://irep.iium.edu.my/99956/1/99956_Doping%20effect%20on%20bandgap%20energy.pdf application/pdf en http://irep.iium.edu.my/99956/2/99956_Doping%20effect%20on%20bandgap%20energy_SCOPUS.pdf Faris Azim Ahmad Fajri, Faris Azim and Hairol Aman, Mohammad Amirul and Ahmad Noorden, Ahmad Fakhrurrazi and Abdul Hamid, Ahmad Noor and Abdul Aziz, Azni (2022) Doping effect on bandgap energy and luminescence spectrum for AlN-based semiconductor. In: 7th International Conference on the Applications of Science and Mathematics, SCIEMATHIC 2021, 27- 28 October 2021, Virtual. https://link.springer.com/chapter/10.1007/978-981-16-8903-1_5 10.1007/978-981-16-8903-1_5
institution Universiti Islam Antarabangsa Malaysia
building IIUM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider International Islamic University Malaysia
content_source IIUM Repository (IREP)
url_provider http://irep.iium.edu.my/
language English
English
topic QC Physics
spellingShingle QC Physics
Faris Azim Ahmad Fajri, Faris Azim
Hairol Aman, Mohammad Amirul
Ahmad Noorden, Ahmad Fakhrurrazi
Abdul Hamid, Ahmad Noor
Abdul Aziz, Azni
Doping effect on bandgap energy and luminescence spectrum for AlN-based semiconductor
description This ongoing work reports the heavy doping effect on the Aluminum Nitride (AlN) semiconductor (SC) material, illustrated via its energy-band structure (EBS). The research correlates the bandgap energy (BE) and depletion region (DR), which are then applied to the estimation of light-emitting diode (LED) luminescence spectrum (LS). The measurements are compared with different dopant concentrations (1 × 1018 cm−3 –1 × 1021 cm−3). Having the Gallium Arsenide (GaAs) properties as the controlled variable, the EBS is validated with literature findings. The measured band gap energy of AlN shifts from 6.2435 to 6.2326 eV. It decreased as the dopant concentration increased. However, the active spatial regions, reduced from (1.0250 × 10−1 to 4.5000 × 10−3 µm) × 1 µm2. The findings are compared with the output LS of LED using the same SC material. The changes in BE and DR are consistent with the LS peak intensity wavelength and relative intensity to all the chosen doping concentrations. Though acquiring this consistency, an extensive discussion with collaboration in material science studies will further strengthen the understanding regarding these behaviours.
format Proceeding Paper
author Faris Azim Ahmad Fajri, Faris Azim
Hairol Aman, Mohammad Amirul
Ahmad Noorden, Ahmad Fakhrurrazi
Abdul Hamid, Ahmad Noor
Abdul Aziz, Azni
author_facet Faris Azim Ahmad Fajri, Faris Azim
Hairol Aman, Mohammad Amirul
Ahmad Noorden, Ahmad Fakhrurrazi
Abdul Hamid, Ahmad Noor
Abdul Aziz, Azni
author_sort Faris Azim Ahmad Fajri, Faris Azim
title Doping effect on bandgap energy and luminescence spectrum for AlN-based semiconductor
title_short Doping effect on bandgap energy and luminescence spectrum for AlN-based semiconductor
title_full Doping effect on bandgap energy and luminescence spectrum for AlN-based semiconductor
title_fullStr Doping effect on bandgap energy and luminescence spectrum for AlN-based semiconductor
title_full_unstemmed Doping effect on bandgap energy and luminescence spectrum for AlN-based semiconductor
title_sort doping effect on bandgap energy and luminescence spectrum for aln-based semiconductor
publisher Springer Science and Business Media Deutschland GmbH
publishDate 2022
url http://irep.iium.edu.my/99956/1/99956_Doping%20effect%20on%20bandgap%20energy.pdf
http://irep.iium.edu.my/99956/2/99956_Doping%20effect%20on%20bandgap%20energy_SCOPUS.pdf
http://irep.iium.edu.my/99956/
https://link.springer.com/chapter/10.1007/978-981-16-8903-1_5
_version_ 1811679612995895296
score 13.211869

Similar Items