Doping effect numerical comparison of band gap energy and active region range for GaN and GaAs based semiconductor
This work reports the effect of doping concentration on the energy-band structure of semiconductor materials. The research focuses on the resultant values of bandgap energy and its depletion region (length/area), based on the initial concentrations of doping which are the donors and acceptors. The e...
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| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Language: | English English |
| Published: |
Institute of Physics Publishing
2021
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/73957/8/73957_Doping%20effect%20numerical%20comparison%20of%20band%20gap%20energy%20and%20active_SCOPUS.pdf http://irep.iium.edu.my/73957/9/73957_Doping%20effect%20numerical%20comparison%20of%20band%20gap%20energy%20and%20active.pdf http://irep.iium.edu.my/73957/ https://iopscience.iop.org/article/10.1088/1742-6596/1892/1/012031/pdf |
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http://irep.iium.edu.my/73957/8/73957_Doping%20effect%20numerical%20comparison%20of%20band%20gap%20energy%20and%20active_SCOPUS.pdfhttp://irep.iium.edu.my/73957/9/73957_Doping%20effect%20numerical%20comparison%20of%20band%20gap%20energy%20and%20active.pdf
http://irep.iium.edu.my/73957/
https://iopscience.iop.org/article/10.1088/1742-6596/1892/1/012031/pdf