Optimizing the efficiency of gallium nitride-based lightemitting diodes from contact area of current spreading to electrode
A nonuniform current spreading in the current spreader layer greatly reduced the internal quantum efficiency (IQE) of the light-emitting diodes (LED). The effects of the current spreading layer on the electrode contact area toward the IQE in a vertical design of gallium nitride (GaN)-based LED chip...
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| Main Authors: | , , , , |
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| 格式: | Article |
| 语言: | English English English English |
| 出版: |
1098-2760
2020
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| 在线阅读: | http://irep.iium.edu.my/84021/25/84021_Optimizing%20the%20efficiency%20of%20gallium%20nitride%E2%80%90based_article_new.pdf http://irep.iium.edu.my/84021/1/1%202020%20MOTL.pdf http://irep.iium.edu.my/84021/8/84021_Optimizing%20the%20efficiency%20of%20gallium%20nitride%E2%80%90based_scopus.pdf http://irep.iium.edu.my/84021/9/84021_Optimizing%20the%20efficiency%20of%20gallium%20nitride%E2%80%90based_wos.pdf http://irep.iium.edu.my/84021/ https://onlinelibrary.wiley.com/doi/abs/10.1002/mop.32698 |
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