Optimizing the efficiency of gallium nitride-based lightemitting diodes from contact area of current spreading to electrode
A nonuniform current spreading in the current spreader layer greatly reduced the internal quantum efficiency (IQE) of the light-emitting diodes (LED). The effects of the current spreading layer on the electrode contact area toward the IQE in a vertical design of gallium nitride (GaN)-based LED chip...
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1098-2760
2020
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my.iium.irep.840212021-03-20T08:57:37Z http://irep.iium.edu.my/84021/ Optimizing the efficiency of gallium nitride-based lightemitting diodes from contact area of current spreading to electrode Shaari, Adam Ahmad Fajri, Faris Azim Ahmad Noorden, Ahmad Fakhrurrazi Abdul Kadir@Jaafar, Muhammad Zamzuri Daud, Suzairi QC Physics A nonuniform current spreading in the current spreader layer greatly reduced the internal quantum efficiency (IQE) of the light-emitting diodes (LED). The effects of the current spreading layer on the electrode contact area toward the IQE in a vertical design of gallium nitride (GaN)-based LED chip is analytically analyzed. The contact area was varied by changing the value of the electrode’s width from 2 to 12 μm. Efficiency droop and current density at peak IQE are analyzed based on contact area. The width of 2 μm requires 1.6 μAm−2 current density to achieve peak efficiency and produces a droop of 0.2150. The width of 12 μm requires 9.6 μAm−2 current density to achieve peak efficiency and produces 0.0557 droop. The increase in contact area increases the current A nonuniform current spreading in the current spreader layer greatly reduced the internal quantum efficiency (IQE) of the light-emitting diodes (LED). The effects of the current spreading layer on the electrode contact area toward the IQE in a vertical design of gallium nitride (GaN)-based LED chip is analytically analyzed. The contact area was varied by changing the value of the electrode’s width from 2 to 12 μm. Efficiency droop and current density at peak IQE are analyzed based on contact area. The width of 2 μm requires 1.6 μAm−2 current density to achieve peak efficiency and produces a droop of 0.2150. The width of 12 μm requires 9.6 μAm−2 current density to achieve peak efficiency and produces 0.0557 droop. The increase in contact area increases the current 1098-2760 2020-10-23 Article PeerReviewed application/pdf en http://irep.iium.edu.my/84021/25/84021_Optimizing%20the%20efficiency%20of%20gallium%20nitride%E2%80%90based_article_new.pdf application/pdf en http://irep.iium.edu.my/84021/1/1%202020%20MOTL.pdf application/pdf en http://irep.iium.edu.my/84021/8/84021_Optimizing%20the%20efficiency%20of%20gallium%20nitride%E2%80%90based_scopus.pdf application/pdf en http://irep.iium.edu.my/84021/9/84021_Optimizing%20the%20efficiency%20of%20gallium%20nitride%E2%80%90based_wos.pdf Shaari, Adam and Ahmad Fajri, Faris Azim and Ahmad Noorden, Ahmad Fakhrurrazi and Abdul Kadir@Jaafar, Muhammad Zamzuri and Daud, Suzairi (2020) Optimizing the efficiency of gallium nitride-based lightemitting diodes from contact area of current spreading to electrode. Microwave and Optical Technology Letters. pp. 970-974. ISSN 0895-2477 E-ISSN 1098-2760 (In Press) https://onlinelibrary.wiley.com/doi/abs/10.1002/mop.32698 10.1002/mop.32698 |
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QC Physics Shaari, Adam Ahmad Fajri, Faris Azim Ahmad Noorden, Ahmad Fakhrurrazi Abdul Kadir@Jaafar, Muhammad Zamzuri Daud, Suzairi Optimizing the efficiency of gallium nitride-based lightemitting diodes from contact area of current spreading to electrode |
| description |
A nonuniform current spreading in the current spreader layer greatly reduced the internal quantum efficiency (IQE) of the light-emitting diodes (LED). The effects of the current spreading layer on the electrode contact area toward the IQE in a vertical design of gallium nitride (GaN)-based LED chip is analytically analyzed. The contact area was varied by changing the value of the electrode’s width from 2 to 12 μm. Efficiency droop and current density at peak IQE are analyzed based on contact area. The width of 2 μm requires 1.6 μAm−2 current density to achieve peak efficiency and produces a droop of 0.2150. The width of 12 μm requires 9.6 μAm−2 current density to achieve peak efficiency and produces 0.0557 droop. The increase in contact area increases the current A nonuniform current spreading in the current spreader layer greatly reduced the internal quantum efficiency (IQE) of the light-emitting diodes (LED). The effects of the current spreading layer on the electrode contact area toward the IQE in a vertical design of gallium nitride (GaN)-based LED chip is analytically analyzed. The contact area was varied by changing the value of the electrode’s width from 2 to 12 μm. Efficiency droop and current density at peak IQE are analyzed based on contact area. The width of 2 μm requires 1.6 μAm−2 current density to achieve peak efficiency and produces a droop of 0.2150. The width of 12 μm requires 9.6 μAm−2 current density to achieve peak efficiency and produces 0.0557 droop. The increase in contact area increases the current |
| format |
Article |
| author |
Shaari, Adam Ahmad Fajri, Faris Azim Ahmad Noorden, Ahmad Fakhrurrazi Abdul Kadir@Jaafar, Muhammad Zamzuri Daud, Suzairi |
| author_facet |
Shaari, Adam Ahmad Fajri, Faris Azim Ahmad Noorden, Ahmad Fakhrurrazi Abdul Kadir@Jaafar, Muhammad Zamzuri Daud, Suzairi |
| author_sort |
Shaari, Adam |
| title |
Optimizing the efficiency of gallium nitride-based lightemitting diodes from contact area of current spreading to electrode |
| title_short |
Optimizing the efficiency of gallium nitride-based lightemitting diodes from contact area of current spreading to electrode |
| title_full |
Optimizing the efficiency of gallium nitride-based lightemitting diodes from contact area of current spreading to electrode |
| title_fullStr |
Optimizing the efficiency of gallium nitride-based lightemitting diodes from contact area of current spreading to electrode |
| title_full_unstemmed |
Optimizing the efficiency of gallium nitride-based lightemitting diodes from contact area of current spreading to electrode |
| title_sort |
optimizing the efficiency of gallium nitride-based lightemitting diodes from contact area of current spreading to electrode |
| publisher |
1098-2760 |
| publishDate |
2020 |
| url |
http://irep.iium.edu.my/84021/25/84021_Optimizing%20the%20efficiency%20of%20gallium%20nitride%E2%80%90based_article_new.pdf http://irep.iium.edu.my/84021/1/1%202020%20MOTL.pdf http://irep.iium.edu.my/84021/8/84021_Optimizing%20the%20efficiency%20of%20gallium%20nitride%E2%80%90based_scopus.pdf http://irep.iium.edu.my/84021/9/84021_Optimizing%20the%20efficiency%20of%20gallium%20nitride%E2%80%90based_wos.pdf http://irep.iium.edu.my/84021/ https://onlinelibrary.wiley.com/doi/abs/10.1002/mop.32698 |
| _version_ |
1695530643135397888 |
| score |
13.251813 |