Durability of 4H-SiC Schottky power diodes irradiated with high-energy bombarding electrons
A performance comparison of high-voltage SiC Schottky power diodes from ROHM Co., and CREE, Inc., is reported. The diodes were irradiated by high-energy, 3.0 MeV, electrons within a fluence ranging from 6.6×1015 to 4.95×1016 electron/cm2 . Current density-voltage and capacitance-voltage character...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English English |
| Published: |
The Institution of Engineering and Technology (IET)
2019
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/72561/1/Revised_M.%20Azim%20Khairi_IET%20Submission.pdf http://irep.iium.edu.my/72561/7/Gmail%20-%20Fwd_%20Decision%20on%20your%20Paper%20-%20IET%20Circuits%2C%20Devices%20%26%20Systems.pdf http://irep.iium.edu.my/72561/ https://digital-library.theiet.org/content/journals/iet-cds |
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