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Durability of 4H-SiC Schottky power diodes irradiated with high-energy bombarding electrons

A performance comparison of high-voltage SiC Schottky power diodes from ROHM Co., and CREE, Inc., is reported. The diodes were irradiated by high-energy, 3.0 MeV, electrons within a fluence ranging from 6.6×1015 to 4.95×1016 electron/cm2 . Current density-voltage and capacitance-voltage character...

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Main Authors: Mohd Khairi, Mohamad Azim, Abdullah, Yusof, Ab Rahim, Rosminazuin, Hasbullah, Nurul Fadzlin
Format: Article
Language:English
English
Published: The Institution of Engineering and Technology (IET) 2019
Subjects:
T Technology (General)
T175 Industrial research. Research and development
TK Electrical engineering. Electronics Nuclear engineering
TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
Online Access:http://irep.iium.edu.my/72561/1/Revised_M.%20Azim%20Khairi_IET%20Submission.pdf
http://irep.iium.edu.my/72561/7/Gmail%20-%20Fwd_%20Decision%20on%20your%20Paper%20-%20IET%20Circuits%2C%20Devices%20%26%20Systems.pdf
http://irep.iium.edu.my/72561/
https://digital-library.theiet.org/content/journals/iet-cds
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spelling my.iium.irep.725612019-06-13T01:02:47Z http://irep.iium.edu.my/72561/ Durability of 4H-SiC Schottky power diodes irradiated with high-energy bombarding electrons Mohd Khairi, Mohamad Azim Abdullah, Yusof Ab Rahim, Rosminazuin Hasbullah, Nurul Fadzlin T Technology (General) T175 Industrial research. Research and development TK Electrical engineering. Electronics Nuclear engineering TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices A performance comparison of high-voltage SiC Schottky power diodes from ROHM Co., and CREE, Inc., is reported. The diodes were irradiated by high-energy, 3.0 MeV, electrons within a fluence ranging from 6.6×1015 to 4.95×1016 electron/cm2 . Current density-voltage and capacitance-voltage characterization were used to investigate the impact of the irradiation on ideality factor, saturation current, series resistance, and barrier height. The results show that the forward current decreased with increasing irradiation, while the reverse current increased except for the diodes irradiated with 4.95×1016 electron/cm2 . The ideality factors increased more significantly at the highest fluence compared to the other fluences i.e. from 1.026 (ROHM) and 1.01 (CREE) at before irradiation to 1.2 (ROHM) and 1.8 (CREE) at 4.95×1016 electron/cm2 . The saturation currents increased until the fluence of 1.6×1016 electron/cm2 , then decreased after 3.3×1016 electron/cm2 which lead to the opposing behaviour observed in barrier height. Subsequently, the series resistances showed a significant rise for both models and are interpreted as being due to the changes in the free carriers’ concentration during irradiation. The capacitance of both models was reduced after irradiation, proving that the free carriers’ concentration has been decreased with increasing fluence due to the trapping effect of the defects. The Institution of Engineering and Technology (IET) 2019 Article PeerReviewed application/pdf en http://irep.iium.edu.my/72561/1/Revised_M.%20Azim%20Khairi_IET%20Submission.pdf application/pdf en http://irep.iium.edu.my/72561/7/Gmail%20-%20Fwd_%20Decision%20on%20your%20Paper%20-%20IET%20Circuits%2C%20Devices%20%26%20Systems.pdf Mohd Khairi, Mohamad Azim and Abdullah, Yusof and Ab Rahim, Rosminazuin and Hasbullah, Nurul Fadzlin (2019) Durability of 4H-SiC Schottky power diodes irradiated with high-energy bombarding electrons. IET Circuits, Devices & Systems, xx (xx). pp. 1-7. ISSN 1751-858X (Unpublished) https://digital-library.theiet.org/content/journals/iet-cds
institution Universiti Islam Antarabangsa Malaysia
building IIUM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider International Islamic University Malaysia
content_source IIUM Repository (IREP)
url_provider http://irep.iium.edu.my/
language English
English
topic T Technology (General)
T175 Industrial research. Research and development
TK Electrical engineering. Electronics Nuclear engineering
TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
spellingShingle T Technology (General)
T175 Industrial research. Research and development
TK Electrical engineering. Electronics Nuclear engineering
TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
Mohd Khairi, Mohamad Azim
Abdullah, Yusof
Ab Rahim, Rosminazuin
Hasbullah, Nurul Fadzlin
Durability of 4H-SiC Schottky power diodes irradiated with high-energy bombarding electrons
description A performance comparison of high-voltage SiC Schottky power diodes from ROHM Co., and CREE, Inc., is reported. The diodes were irradiated by high-energy, 3.0 MeV, electrons within a fluence ranging from 6.6×1015 to 4.95×1016 electron/cm2 . Current density-voltage and capacitance-voltage characterization were used to investigate the impact of the irradiation on ideality factor, saturation current, series resistance, and barrier height. The results show that the forward current decreased with increasing irradiation, while the reverse current increased except for the diodes irradiated with 4.95×1016 electron/cm2 . The ideality factors increased more significantly at the highest fluence compared to the other fluences i.e. from 1.026 (ROHM) and 1.01 (CREE) at before irradiation to 1.2 (ROHM) and 1.8 (CREE) at 4.95×1016 electron/cm2 . The saturation currents increased until the fluence of 1.6×1016 electron/cm2 , then decreased after 3.3×1016 electron/cm2 which lead to the opposing behaviour observed in barrier height. Subsequently, the series resistances showed a significant rise for both models and are interpreted as being due to the changes in the free carriers’ concentration during irradiation. The capacitance of both models was reduced after irradiation, proving that the free carriers’ concentration has been decreased with increasing fluence due to the trapping effect of the defects.
format Article
author Mohd Khairi, Mohamad Azim
Abdullah, Yusof
Ab Rahim, Rosminazuin
Hasbullah, Nurul Fadzlin
author_facet Mohd Khairi, Mohamad Azim
Abdullah, Yusof
Ab Rahim, Rosminazuin
Hasbullah, Nurul Fadzlin
author_sort Mohd Khairi, Mohamad Azim
title Durability of 4H-SiC Schottky power diodes irradiated with high-energy bombarding electrons
title_short Durability of 4H-SiC Schottky power diodes irradiated with high-energy bombarding electrons
title_full Durability of 4H-SiC Schottky power diodes irradiated with high-energy bombarding electrons
title_fullStr Durability of 4H-SiC Schottky power diodes irradiated with high-energy bombarding electrons
title_full_unstemmed Durability of 4H-SiC Schottky power diodes irradiated with high-energy bombarding electrons
title_sort durability of 4h-sic schottky power diodes irradiated with high-energy bombarding electrons
publisher The Institution of Engineering and Technology (IET)
publishDate 2019
url http://irep.iium.edu.my/72561/1/Revised_M.%20Azim%20Khairi_IET%20Submission.pdf
http://irep.iium.edu.my/72561/7/Gmail%20-%20Fwd_%20Decision%20on%20your%20Paper%20-%20IET%20Circuits%2C%20Devices%20%26%20Systems.pdf
http://irep.iium.edu.my/72561/
https://digital-library.theiet.org/content/journals/iet-cds
_version_ 1643620165951160320
score 13.211869

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