NEGF-based transport phenomena for semiconduncting CNTFET
A transport phenomenon of carbon nanotube field effect transistor (CNTFET) is proposed in this paper. Non-Equilibrium Green's Function (NEGF) is used to design the proposed model. CNT chiral vector is straightly connected with CNTFET transport properties by this method. The ballistic CNTFET is...
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| Main Authors: | , , , |
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| Format: | Conference or Workshop Item |
| Language: | English English |
| Published: |
IEEE
2015
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/53226/12/53226.pdf http://irep.iium.edu.my/53226/13/53226-NEGF-based%20transport%20phenomena%20for%20semiconduncting%20CNTFET_SCOPUS.pdf http://irep.iium.edu.my/53226/ http://ieeexplore.ieee.org/document/7176386/ |
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