NEGF-based transport phenomena for semiconduncting CNTFET

A transport phenomenon of carbon nanotube field effect transistor (CNTFET) is proposed in this paper. Non-Equilibrium Green's Function (NEGF) is used to design the proposed model. CNT chiral vector is straightly connected with CNTFET transport properties by this method. The ballistic CNTFET is...

Full description

Saved in:
Bibliographic Details
Main Authors: Farhana, Soheli, Alam, A H M Zahirul, Khan, Sheroz, Motakabber, S M A
Format: Conference or Workshop Item
Language:English
English
Published: IEEE 2015
Subjects:
Online Access:http://irep.iium.edu.my/53226/12/53226.pdf
http://irep.iium.edu.my/53226/13/53226-NEGF-based%20transport%20phenomena%20for%20semiconduncting%20CNTFET_SCOPUS.pdf
http://irep.iium.edu.my/53226/
http://ieeexplore.ieee.org/document/7176386/
Tags: Add Tag
No Tags, Be the first to tag this record!
id my.iium.irep.53226
record_format dspace
spelling my.iium.irep.532262017-03-09T02:39:22Z http://irep.iium.edu.my/53226/ NEGF-based transport phenomena for semiconduncting CNTFET Farhana, Soheli Alam, A H M Zahirul Khan, Sheroz Motakabber, S M A TK Electrical engineering. Electronics Nuclear engineering A transport phenomenon of carbon nanotube field effect transistor (CNTFET) is proposed in this paper. Non-Equilibrium Green's Function (NEGF) is used to design the proposed model. CNT chiral vector is straightly connected with CNTFET transport properties by this method. The ballistic CNTFET is realized by the carrier transport in the conduction and valence band. This phenomenon of CNT introduces a excellent quality of semiconducting material. The output current voltage characteristic is analyzed and simulated in this paper. From the simulated results, the behavior of the ON states current of semiconducting CNT is realized in 69.5μA. IEEE 2015 Conference or Workshop Item REM application/pdf en http://irep.iium.edu.my/53226/12/53226.pdf application/pdf en http://irep.iium.edu.my/53226/13/53226-NEGF-based%20transport%20phenomena%20for%20semiconduncting%20CNTFET_SCOPUS.pdf Farhana, Soheli and Alam, A H M Zahirul and Khan, Sheroz and Motakabber, S M A (2015) NEGF-based transport phenomena for semiconduncting CNTFET. In: 2015 5th National Symposium on Information Technology: Towards New Smart World (NSITNSW), 17th-19th February 2015, Riyadh, Saudi Arab. http://ieeexplore.ieee.org/document/7176386/ 10.1109/NSITNSW.2015.7176386
institution Universiti Islam Antarabangsa Malaysia
building IIUM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider International Islamic University Malaysia
content_source IIUM Repository (IREP)
url_provider http://irep.iium.edu.my/
language English
English
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Farhana, Soheli
Alam, A H M Zahirul
Khan, Sheroz
Motakabber, S M A
NEGF-based transport phenomena for semiconduncting CNTFET
description A transport phenomenon of carbon nanotube field effect transistor (CNTFET) is proposed in this paper. Non-Equilibrium Green's Function (NEGF) is used to design the proposed model. CNT chiral vector is straightly connected with CNTFET transport properties by this method. The ballistic CNTFET is realized by the carrier transport in the conduction and valence band. This phenomenon of CNT introduces a excellent quality of semiconducting material. The output current voltage characteristic is analyzed and simulated in this paper. From the simulated results, the behavior of the ON states current of semiconducting CNT is realized in 69.5μA.
format Conference or Workshop Item
author Farhana, Soheli
Alam, A H M Zahirul
Khan, Sheroz
Motakabber, S M A
author_facet Farhana, Soheli
Alam, A H M Zahirul
Khan, Sheroz
Motakabber, S M A
author_sort Farhana, Soheli
title NEGF-based transport phenomena for semiconduncting CNTFET
title_short NEGF-based transport phenomena for semiconduncting CNTFET
title_full NEGF-based transport phenomena for semiconduncting CNTFET
title_fullStr NEGF-based transport phenomena for semiconduncting CNTFET
title_full_unstemmed NEGF-based transport phenomena for semiconduncting CNTFET
title_sort negf-based transport phenomena for semiconduncting cntfet
publisher IEEE
publishDate 2015
url http://irep.iium.edu.my/53226/12/53226.pdf
http://irep.iium.edu.my/53226/13/53226-NEGF-based%20transport%20phenomena%20for%20semiconduncting%20CNTFET_SCOPUS.pdf
http://irep.iium.edu.my/53226/
http://ieeexplore.ieee.org/document/7176386/
_version_ 1643614315128815616
score 13.211869