NEGF-based transport phenomena for semiconduncting CNTFET
A transport phenomenon of carbon nanotube field effect transistor (CNTFET) is proposed in this paper. Non-Equilibrium Green's Function (NEGF) is used to design the proposed model. CNT chiral vector is straightly connected with CNTFET transport properties by this method. The ballistic CNTFET is...
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my.iium.irep.532262017-03-09T02:39:22Z http://irep.iium.edu.my/53226/ NEGF-based transport phenomena for semiconduncting CNTFET Farhana, Soheli Alam, A H M Zahirul Khan, Sheroz Motakabber, S M A TK Electrical engineering. Electronics Nuclear engineering A transport phenomenon of carbon nanotube field effect transistor (CNTFET) is proposed in this paper. Non-Equilibrium Green's Function (NEGF) is used to design the proposed model. CNT chiral vector is straightly connected with CNTFET transport properties by this method. The ballistic CNTFET is realized by the carrier transport in the conduction and valence band. This phenomenon of CNT introduces a excellent quality of semiconducting material. The output current voltage characteristic is analyzed and simulated in this paper. From the simulated results, the behavior of the ON states current of semiconducting CNT is realized in 69.5μA. IEEE 2015 Conference or Workshop Item REM application/pdf en http://irep.iium.edu.my/53226/12/53226.pdf application/pdf en http://irep.iium.edu.my/53226/13/53226-NEGF-based%20transport%20phenomena%20for%20semiconduncting%20CNTFET_SCOPUS.pdf Farhana, Soheli and Alam, A H M Zahirul and Khan, Sheroz and Motakabber, S M A (2015) NEGF-based transport phenomena for semiconduncting CNTFET. In: 2015 5th National Symposium on Information Technology: Towards New Smart World (NSITNSW), 17th-19th February 2015, Riyadh, Saudi Arab. http://ieeexplore.ieee.org/document/7176386/ 10.1109/NSITNSW.2015.7176386 |
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TK Electrical engineering. Electronics Nuclear engineering Farhana, Soheli Alam, A H M Zahirul Khan, Sheroz Motakabber, S M A NEGF-based transport phenomena for semiconduncting CNTFET |
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A transport phenomenon of carbon nanotube field effect transistor (CNTFET) is proposed in this paper. Non-Equilibrium Green's Function (NEGF) is used to design the proposed model. CNT chiral vector is straightly connected with CNTFET transport properties by this method. The ballistic CNTFET is realized by the carrier transport in the conduction and valence band. This phenomenon of CNT introduces a excellent quality of semiconducting material. The output current voltage characteristic is analyzed and simulated in this paper. From the simulated results, the behavior of the ON states current of semiconducting CNT is realized in 69.5μA. |
format |
Conference or Workshop Item |
author |
Farhana, Soheli Alam, A H M Zahirul Khan, Sheroz Motakabber, S M A |
author_facet |
Farhana, Soheli Alam, A H M Zahirul Khan, Sheroz Motakabber, S M A |
author_sort |
Farhana, Soheli |
title |
NEGF-based transport phenomena for semiconduncting CNTFET |
title_short |
NEGF-based transport phenomena for semiconduncting CNTFET |
title_full |
NEGF-based transport phenomena for semiconduncting CNTFET |
title_fullStr |
NEGF-based transport phenomena for semiconduncting CNTFET |
title_full_unstemmed |
NEGF-based transport phenomena for semiconduncting CNTFET |
title_sort |
negf-based transport phenomena for semiconduncting cntfet |
publisher |
IEEE |
publishDate |
2015 |
url |
http://irep.iium.edu.my/53226/12/53226.pdf http://irep.iium.edu.my/53226/13/53226-NEGF-based%20transport%20phenomena%20for%20semiconduncting%20CNTFET_SCOPUS.pdf http://irep.iium.edu.my/53226/ http://ieeexplore.ieee.org/document/7176386/ |
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13.211869 |