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Advancing high-volume GaN manufacturing: precision simulation of electrical and geometrical deviations through current spreading

Manufacturing process deviations pose significant challenges in GaN manufacturing especially when modern technologies demand extreme chip densities. More than a thousand of each of three distinct GaN-based flip-chips were manufactured where the standard deviations of the measured voltages ranged fro...

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Main Authors: Ahmad Fajri, Faris Azim, Kopp, Fabian, Ahmad Noorden, Ahmad Fakhrurrazi, Iglesias, Alvaro Gomez
Format: Article
Language:English
English
English
Published: IOP Publishing 2024
Subjects:
QC Physics
Online Access:http://irep.iium.edu.my/117266/7/117266_Advancing%20high-volume%20GaN%20manufacturing.pdf
http://irep.iium.edu.my/117266/8/117266_Advancing%20high-volume%20GaN%20manufacturing_Scopus.pdf
http://irep.iium.edu.my/117266/9/117266_Advancing%20high-volume%20GaN%20manufacturing_WoS.pdf
http://irep.iium.edu.my/117266/
https://iopscience.iop.org/article/10.1088/2631-8695/ad853a
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spelling my.iium.irep.1172662024-12-27T02:11:42Z http://irep.iium.edu.my/117266/ Advancing high-volume GaN manufacturing: precision simulation of electrical and geometrical deviations through current spreading Ahmad Fajri, Faris Azim Kopp, Fabian Ahmad Noorden, Ahmad Fakhrurrazi Iglesias, Alvaro Gomez QC Physics Manufacturing process deviations pose significant challenges in GaN manufacturing especially when modern technologies demand extreme chip densities. More than a thousand of each of three distinct GaN-based flip-chips were manufactured where the standard deviations of the measured voltages ranged from 13 to 23 mV. By integrating Monte Carlo and finite element methods in the simulations which relies on the theoretical models, the results were validated by comparing the voltage measurements of the three thousand manufactured chips. Validation was even successful considering the voltage deviations of the three distinct designs equivalently, i.e., affected each wafer’s geometrical and electrical properties. In addition, comparing the three designs, Chip A emerged as the optimal choice for low current resistivity. Looking ahead, our theoretical modeling andsimulation hold promise for high-accuracy predictions in high-volume GaN-based chip manufacturing, enhancing reliability and performance. IOP Publishing 2024-10-18 Article PeerReviewed application/pdf en http://irep.iium.edu.my/117266/7/117266_Advancing%20high-volume%20GaN%20manufacturing.pdf application/pdf en http://irep.iium.edu.my/117266/8/117266_Advancing%20high-volume%20GaN%20manufacturing_Scopus.pdf application/pdf en http://irep.iium.edu.my/117266/9/117266_Advancing%20high-volume%20GaN%20manufacturing_WoS.pdf Ahmad Fajri, Faris Azim and Kopp, Fabian and Ahmad Noorden, Ahmad Fakhrurrazi and Iglesias, Alvaro Gomez (2024) Advancing high-volume GaN manufacturing: precision simulation of electrical and geometrical deviations through current spreading. Engineering Research Express, 6 (4). E-ISSN 2631-8695 https://iopscience.iop.org/article/10.1088/2631-8695/ad853a 10.1088/2631-8695/ad853a
institution Universiti Islam Antarabangsa Malaysia
building IIUM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider International Islamic University Malaysia
content_source IIUM Repository (IREP)
url_provider http://irep.iium.edu.my/
language English
English
English
topic QC Physics
spellingShingle QC Physics
Ahmad Fajri, Faris Azim
Kopp, Fabian
Ahmad Noorden, Ahmad Fakhrurrazi
Iglesias, Alvaro Gomez
Advancing high-volume GaN manufacturing: precision simulation of electrical and geometrical deviations through current spreading
description Manufacturing process deviations pose significant challenges in GaN manufacturing especially when modern technologies demand extreme chip densities. More than a thousand of each of three distinct GaN-based flip-chips were manufactured where the standard deviations of the measured voltages ranged from 13 to 23 mV. By integrating Monte Carlo and finite element methods in the simulations which relies on the theoretical models, the results were validated by comparing the voltage measurements of the three thousand manufactured chips. Validation was even successful considering the voltage deviations of the three distinct designs equivalently, i.e., affected each wafer’s geometrical and electrical properties. In addition, comparing the three designs, Chip A emerged as the optimal choice for low current resistivity. Looking ahead, our theoretical modeling andsimulation hold promise for high-accuracy predictions in high-volume GaN-based chip manufacturing, enhancing reliability and performance.
format Article
author Ahmad Fajri, Faris Azim
Kopp, Fabian
Ahmad Noorden, Ahmad Fakhrurrazi
Iglesias, Alvaro Gomez
author_facet Ahmad Fajri, Faris Azim
Kopp, Fabian
Ahmad Noorden, Ahmad Fakhrurrazi
Iglesias, Alvaro Gomez
author_sort Ahmad Fajri, Faris Azim
title Advancing high-volume GaN manufacturing: precision simulation of electrical and geometrical deviations through current spreading
title_short Advancing high-volume GaN manufacturing: precision simulation of electrical and geometrical deviations through current spreading
title_full Advancing high-volume GaN manufacturing: precision simulation of electrical and geometrical deviations through current spreading
title_fullStr Advancing high-volume GaN manufacturing: precision simulation of electrical and geometrical deviations through current spreading
title_full_unstemmed Advancing high-volume GaN manufacturing: precision simulation of electrical and geometrical deviations through current spreading
title_sort advancing high-volume gan manufacturing: precision simulation of electrical and geometrical deviations through current spreading
publisher IOP Publishing
publishDate 2024
url http://irep.iium.edu.my/117266/7/117266_Advancing%20high-volume%20GaN%20manufacturing.pdf
http://irep.iium.edu.my/117266/8/117266_Advancing%20high-volume%20GaN%20manufacturing_Scopus.pdf
http://irep.iium.edu.my/117266/9/117266_Advancing%20high-volume%20GaN%20manufacturing_WoS.pdf
http://irep.iium.edu.my/117266/
https://iopscience.iop.org/article/10.1088/2631-8695/ad853a
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score 13.244413

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