REMOVAL OF IMPURITIES FROM MILLED AMORPHOUS SILICON DIOXIDE THROUGH THERMAL ANNEALING AND ACID LEACHING USING TAGUCHI METHODS FOR 3C SILICON CARBIDE PHOTOVOLTAIC APPLICATION
In the past year, silicon carbide (SiC) technology have been advancing vastly in this competitive world. One of the problems encountered in producing a higher concentration of amorphous silicon dioxide for SiC for a photovoltaic application that it must undergo expensive purification process and sev...
محفوظ في:
| المؤلف الرئيسي: | |
|---|---|
| التنسيق: | Final Year Project |
| اللغة: | English |
| منشور في: |
IRC
2017
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| الموضوعات: | |
| الوصول للمادة أونلاين: | http://utpedia.utp.edu.my/17940/1/1.%20FYP%20FINAL%20DISSERTATION%202.pdf http://utpedia.utp.edu.my/17940/ |
| الوسوم: |
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