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REMOVAL OF IMPURITIES FROM MILLED AMORPHOUS SILICON DIOXIDE THROUGH THERMAL ANNEALING AND ACID LEACHING USING TAGUCHI METHODS FOR 3C SILICON CARBIDE PHOTOVOLTAIC APPLICATION

In the past year, silicon carbide (SiC) technology have been advancing vastly in this competitive world. One of the problems encountered in producing a higher concentration of amorphous silicon dioxide for SiC for a photovoltaic application that it must undergo expensive purification process and sev...

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Main Author: SUBRAMANIAN, VISALACHY
Format: Final Year Project
Language:English
Published: IRC 2017
Subjects:
TJ Mechanical engineering and machinery
Online Access:http://utpedia.utp.edu.my/17940/1/1.%20FYP%20FINAL%20DISSERTATION%202.pdf
http://utpedia.utp.edu.my/17940/
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spelling my-utp-utpedia.179402018-08-01T09:54:12Z http://utpedia.utp.edu.my/17940/ REMOVAL OF IMPURITIES FROM MILLED AMORPHOUS SILICON DIOXIDE THROUGH THERMAL ANNEALING AND ACID LEACHING USING TAGUCHI METHODS FOR 3C SILICON CARBIDE PHOTOVOLTAIC APPLICATION SUBRAMANIAN, VISALACHY TJ Mechanical engineering and machinery In the past year, silicon carbide (SiC) technology have been advancing vastly in this competitive world. One of the problems encountered in producing a higher concentration of amorphous silicon dioxide for SiC for a photovoltaic application that it must undergo expensive purification process and several treatments to remove metal impurities dependent on the concentration of required silica. Considering the facts that SiC is one the most important element in the photovoltaic industry, this project aims to design an experiment with low cost and higher efficiency using Taguchi's Design of Experiment method for the purification process of amorphous silicon dioxide. There are 4 processing parameters with a total of nine experiments are conducted. The results of this experiment are analysed using the analysis of variance (ANOVA) technique by analysing the morphology changes of amorphous silicon dioxide by Scanning Electron Microscope (SEM) and X-Ray Fluorescence (XRF) which represents the element analysis and compared with the different purification stages to determine which has lower metal impurities concentration and yield high purity of silica. The optimum parameters for removal of impurities from amorphous silicon dioxide and yield high purity of silica are mechanical milling time of 120 minutes, drying temperature of 200oC, followed by thermal annealing temperature of 1000 oC and lastly acid leaching duration of 360 minutes. These results make this method very interesting for production of silica intended for photovoltaic application IRC 2017 Final Year Project NonPeerReviewed application/pdf en http://utpedia.utp.edu.my/17940/1/1.%20FYP%20FINAL%20DISSERTATION%202.pdf SUBRAMANIAN, VISALACHY (2017) REMOVAL OF IMPURITIES FROM MILLED AMORPHOUS SILICON DIOXIDE THROUGH THERMAL ANNEALING AND ACID LEACHING USING TAGUCHI METHODS FOR 3C SILICON CARBIDE PHOTOVOLTAIC APPLICATION. IRC, Universiti Teknologi PETRONAS.
institution Universiti Teknologi Petronas
building UTP Resource Centre
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Petronas
content_source UTP Electronic and Digitized Intellectual Asset
url_provider http://utpedia.utp.edu.my/
language English
topic TJ Mechanical engineering and machinery
spellingShingle TJ Mechanical engineering and machinery
SUBRAMANIAN, VISALACHY
REMOVAL OF IMPURITIES FROM MILLED AMORPHOUS SILICON DIOXIDE THROUGH THERMAL ANNEALING AND ACID LEACHING USING TAGUCHI METHODS FOR 3C SILICON CARBIDE PHOTOVOLTAIC APPLICATION
description In the past year, silicon carbide (SiC) technology have been advancing vastly in this competitive world. One of the problems encountered in producing a higher concentration of amorphous silicon dioxide for SiC for a photovoltaic application that it must undergo expensive purification process and several treatments to remove metal impurities dependent on the concentration of required silica. Considering the facts that SiC is one the most important element in the photovoltaic industry, this project aims to design an experiment with low cost and higher efficiency using Taguchi's Design of Experiment method for the purification process of amorphous silicon dioxide. There are 4 processing parameters with a total of nine experiments are conducted. The results of this experiment are analysed using the analysis of variance (ANOVA) technique by analysing the morphology changes of amorphous silicon dioxide by Scanning Electron Microscope (SEM) and X-Ray Fluorescence (XRF) which represents the element analysis and compared with the different purification stages to determine which has lower metal impurities concentration and yield high purity of silica. The optimum parameters for removal of impurities from amorphous silicon dioxide and yield high purity of silica are mechanical milling time of 120 minutes, drying temperature of 200oC, followed by thermal annealing temperature of 1000 oC and lastly acid leaching duration of 360 minutes. These results make this method very interesting for production of silica intended for photovoltaic application
format Final Year Project
author SUBRAMANIAN, VISALACHY
author_facet SUBRAMANIAN, VISALACHY
author_sort SUBRAMANIAN, VISALACHY
title REMOVAL OF IMPURITIES FROM MILLED AMORPHOUS SILICON DIOXIDE THROUGH THERMAL ANNEALING AND ACID LEACHING USING TAGUCHI METHODS FOR 3C SILICON CARBIDE PHOTOVOLTAIC APPLICATION
title_short REMOVAL OF IMPURITIES FROM MILLED AMORPHOUS SILICON DIOXIDE THROUGH THERMAL ANNEALING AND ACID LEACHING USING TAGUCHI METHODS FOR 3C SILICON CARBIDE PHOTOVOLTAIC APPLICATION
title_full REMOVAL OF IMPURITIES FROM MILLED AMORPHOUS SILICON DIOXIDE THROUGH THERMAL ANNEALING AND ACID LEACHING USING TAGUCHI METHODS FOR 3C SILICON CARBIDE PHOTOVOLTAIC APPLICATION
title_fullStr REMOVAL OF IMPURITIES FROM MILLED AMORPHOUS SILICON DIOXIDE THROUGH THERMAL ANNEALING AND ACID LEACHING USING TAGUCHI METHODS FOR 3C SILICON CARBIDE PHOTOVOLTAIC APPLICATION
title_full_unstemmed REMOVAL OF IMPURITIES FROM MILLED AMORPHOUS SILICON DIOXIDE THROUGH THERMAL ANNEALING AND ACID LEACHING USING TAGUCHI METHODS FOR 3C SILICON CARBIDE PHOTOVOLTAIC APPLICATION
title_sort removal of impurities from milled amorphous silicon dioxide through thermal annealing and acid leaching using taguchi methods for 3c silicon carbide photovoltaic application
publisher IRC
publishDate 2017
url http://utpedia.utp.edu.my/17940/1/1.%20FYP%20FINAL%20DISSERTATION%202.pdf
http://utpedia.utp.edu.my/17940/
_version_ 1739832440666456064
score 13.211869

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