REMOVAL OF IMPURITIES FROM MILLED AMORPHOUS SILICON DIOXIDE THROUGH THERMAL ANNEALING AND ACID LEACHING USING TAGUCHI METHODS FOR 3C SILICON CARBIDE PHOTOVOLTAIC APPLICATION

In the past year, silicon carbide (SiC) technology have been advancing vastly in this competitive world. One of the problems encountered in producing a higher concentration of amorphous silicon dioxide for SiC for a photovoltaic application that it must undergo expensive purification process and sev...

全面介紹

Saved in:
書目詳細資料
主要作者: SUBRAMANIAN, VISALACHY
格式: Final Year Project
語言:English
出版: IRC 2017
主題:
在線閱讀:http://utpedia.utp.edu.my/17940/1/1.%20FYP%20FINAL%20DISSERTATION%202.pdf
http://utpedia.utp.edu.my/17940/
標簽: 添加標簽
沒有標簽, 成為第一個標記此記錄!