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A Review on modeling the channel potential in multi-gate MOSFETs

This paper attempts to give a detailed review and provide a complete description on the technology, physics and modeling of various Multi-Gate MOSFETs. It consists of a synopsis of mathematical depiction of the potential distribution along the channel of various MG-MOSFETs which can be made to enabl...

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Main Authors: Hossein Mohammadi,, Huda Abdullah,, Chang, Fu Dee
Format: Article
Language:English
Published: Universiti Kebangsaan Malaysia 2014
Online Access:http://journalarticle.ukm.my/7174/1/07_Hossein_Mohammadi.pdf
http://journalarticle.ukm.my/7174/
http://www.ukm.my/jsm/
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spelling my-ukm.journal.71742016-12-14T06:43:18Z http://journalarticle.ukm.my/7174/ A Review on modeling the channel potential in multi-gate MOSFETs Hossein Mohammadi, Huda Abdullah, Chang, Fu Dee This paper attempts to give a detailed review and provide a complete description on the technology, physics and modeling of various Multi-Gate MOSFETs. It consists of a synopsis of mathematical depiction of the potential distribution along the channel of various MG-MOSFETs which can be made to enable fast computer analysis of device behavior. This serves a link between process technology and circuit design. This review demonstrates that this technology is strongly desired in nanoscale domain and there is a plenty demand for analytical model which can explain the physics and operation of the devices perfectly. Universiti Kebangsaan Malaysia 2014-06 Article PeerReviewed application/pdf en http://journalarticle.ukm.my/7174/1/07_Hossein_Mohammadi.pdf Hossein Mohammadi, and Huda Abdullah, and Chang, Fu Dee (2014) A Review on modeling the channel potential in multi-gate MOSFETs. Sains Malaysiana, 43 (6). pp. 861-866. ISSN 0126-6039 http://www.ukm.my/jsm/
institution Universiti Kebangsaan Malaysia
building Perpustakaan Tun Sri Lanang Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Kebangsaan Malaysia
content_source UKM Journal Article Repository
url_provider http://journalarticle.ukm.my/
language English
description This paper attempts to give a detailed review and provide a complete description on the technology, physics and modeling of various Multi-Gate MOSFETs. It consists of a synopsis of mathematical depiction of the potential distribution along the channel of various MG-MOSFETs which can be made to enable fast computer analysis of device behavior. This serves a link between process technology and circuit design. This review demonstrates that this technology is strongly desired in nanoscale domain and there is a plenty demand for analytical model which can explain the physics and operation of the devices perfectly.
format Article
author Hossein Mohammadi,
Huda Abdullah,
Chang, Fu Dee
spellingShingle Hossein Mohammadi,
Huda Abdullah,
Chang, Fu Dee
A Review on modeling the channel potential in multi-gate MOSFETs
author_facet Hossein Mohammadi,
Huda Abdullah,
Chang, Fu Dee
author_sort Hossein Mohammadi,
title A Review on modeling the channel potential in multi-gate MOSFETs
title_short A Review on modeling the channel potential in multi-gate MOSFETs
title_full A Review on modeling the channel potential in multi-gate MOSFETs
title_fullStr A Review on modeling the channel potential in multi-gate MOSFETs
title_full_unstemmed A Review on modeling the channel potential in multi-gate MOSFETs
title_sort review on modeling the channel potential in multi-gate mosfets
publisher Universiti Kebangsaan Malaysia
publishDate 2014
url http://journalarticle.ukm.my/7174/1/07_Hossein_Mohammadi.pdf
http://journalarticle.ukm.my/7174/
http://www.ukm.my/jsm/
_version_ 1643737029894209536
score 13.211869

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