A Review on modeling the channel potential in multi-gate MOSFETs

This paper attempts to give a detailed review and provide a complete description on the technology, physics and modeling of various Multi-Gate MOSFETs. It consists of a synopsis of mathematical depiction of the potential distribution along the channel of various MG-MOSFETs which can be made to enabl...

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Bibliographic Details
Main Authors: Hossein Mohammadi,, Huda Abdullah,, Chang, Fu Dee
Format: Article
Language:English
Published: Universiti Kebangsaan Malaysia 2014
Online Access:http://journalarticle.ukm.my/7174/1/07_Hossein_Mohammadi.pdf
http://journalarticle.ukm.my/7174/
http://www.ukm.my/jsm/
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