PROBABILISTIC METHODS FOR NANG-COMPUTING

As CMOS transistors enter below 20nm dimension, the frequent static and intermiitent dynamic fluctuation will result to variations in the electrical parameters of those transistors. In tum, these variations will cause the performance of CMOS transistors to be unstable, which will then continue to...

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主要作者: SAWARAN SINGH, NARINDERJIT SINGH
格式: Thesis
语言:English
出版: 2017
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在线阅读:http://utpedia.utp.edu.my/id/eprint/21551/1/2015%20-ELECTRICAL%20%26%20ELECTRONICS%20-%20PROBABILISTIC%20METHOODS%20FOR%20NANO-COMPUTING%20-%20NARINDERJIT%20SINGH%20SAWARAN%20SINGH.pdf
http://utpedia.utp.edu.my/id/eprint/21551/
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