PROBABILISTIC METHODS FOR NANG-COMPUTING

As CMOS transistors enter below 20nm dimension, the frequent static and intermiitent dynamic fluctuation will result to variations in the electrical parameters of those transistors. In tum, these variations will cause the performance of CMOS transistors to be unstable, which will then continue to...

詳細記述

保存先:
書誌詳細
第一著者: SAWARAN SINGH, NARINDERJIT SINGH
フォーマット: 学位論文
言語:English
出版事項: 2017
主題:
オンライン・アクセス:http://utpedia.utp.edu.my/id/eprint/21551/1/2015%20-ELECTRICAL%20%26%20ELECTRONICS%20-%20PROBABILISTIC%20METHOODS%20FOR%20NANO-COMPUTING%20-%20NARINDERJIT%20SINGH%20SAWARAN%20SINGH.pdf
http://utpedia.utp.edu.my/id/eprint/21551/
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