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CHARACTERIZATION OF A CMOS-MEMS DEVICE FOR THE DETECTION OF WEAK VIBRATION

The paper review about the usage of the integration between Complementary Metal Oxide System and Micromechanical system (CMOS-MEMS device) for the detection of weak vibration. The available CMOS-MEMS device at Universiti Teknologi PETRONAS is the device that has high resonance frequency which is 6.1...

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Main Author: ABDUL RASHID, DANIAL HAFIZ
Format: Final Year Project
Language:English
Published: 2017
Online Access:http://utpedia.utp.edu.my/id/eprint/19100/1/Final%20Dissertation%20Danial%20Hafiz%2019139.pdf
http://utpedia.utp.edu.my/id/eprint/19100/
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spelling oai:utpedia.utp.edu.my:191002023-03-14T07:39:39Z http://utpedia.utp.edu.my/id/eprint/19100/ CHARACTERIZATION OF A CMOS-MEMS DEVICE FOR THE DETECTION OF WEAK VIBRATION ABDUL RASHID, DANIAL HAFIZ The paper review about the usage of the integration between Complementary Metal Oxide System and Micromechanical system (CMOS-MEMS device) for the detection of weak vibration. The available CMOS-MEMS device at Universiti Teknologi PETRONAS is the device that has high resonance frequency which is 6.160 kHz. For this project, the student need to use the device to detect weak vibration which is in frequency range between 1 kHz to 3 kHz. The scope of studies for this project are to calculate the CMOS-MEMS parameters such as spring constant, resonance frequency and quality factor of the device. Besides, student need to do theoretically characterization of the device by using Finite Element Analysis (FEA) simulation software and lastly conduct experimental characterization of the device to verify the result obtain from the calculation and simulation. The parameters of the device can be calculated using the equation provided in this paper. After the result obtained, the project proceeds by conducting FEA simulation using CoventorWare to verify the result obtain earlier. Lastly, the process will be done by experimental characterization of the device by using equipment in the lab. As stated before, the resonance frequency of the CMOS-MEMS device is 6.1610 kHz. So, the frequency of the device need to be reduced by increasing the mass of the device. As calculated, addition of 11.1458 x 10-9 kg mass need to be added to achieve 2.53 kHz of the resonance frequency. In conclusion, the resonance frequency can be changed either by changing the width of the beam or increase the mass of the device. For this project, the device need to be added with some additional mass to get targeted resonance frequency. 2017-09 Final Year Project NonPeerReviewed application/pdf en http://utpedia.utp.edu.my/id/eprint/19100/1/Final%20Dissertation%20Danial%20Hafiz%2019139.pdf ABDUL RASHID, DANIAL HAFIZ (2017) CHARACTERIZATION OF A CMOS-MEMS DEVICE FOR THE DETECTION OF WEAK VIBRATION. [Final Year Project]
institution Universiti Teknologi Petronas
building UTP Resource Centre
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Petronas
content_source UTP Electronic and Digitized Intellectual Asset
url_provider http://utpedia.utp.edu.my/
language English
description The paper review about the usage of the integration between Complementary Metal Oxide System and Micromechanical system (CMOS-MEMS device) for the detection of weak vibration. The available CMOS-MEMS device at Universiti Teknologi PETRONAS is the device that has high resonance frequency which is 6.160 kHz. For this project, the student need to use the device to detect weak vibration which is in frequency range between 1 kHz to 3 kHz. The scope of studies for this project are to calculate the CMOS-MEMS parameters such as spring constant, resonance frequency and quality factor of the device. Besides, student need to do theoretically characterization of the device by using Finite Element Analysis (FEA) simulation software and lastly conduct experimental characterization of the device to verify the result obtain from the calculation and simulation. The parameters of the device can be calculated using the equation provided in this paper. After the result obtained, the project proceeds by conducting FEA simulation using CoventorWare to verify the result obtain earlier. Lastly, the process will be done by experimental characterization of the device by using equipment in the lab. As stated before, the resonance frequency of the CMOS-MEMS device is 6.1610 kHz. So, the frequency of the device need to be reduced by increasing the mass of the device. As calculated, addition of 11.1458 x 10-9 kg mass need to be added to achieve 2.53 kHz of the resonance frequency. In conclusion, the resonance frequency can be changed either by changing the width of the beam or increase the mass of the device. For this project, the device need to be added with some additional mass to get targeted resonance frequency.
format Final Year Project
author ABDUL RASHID, DANIAL HAFIZ
spellingShingle ABDUL RASHID, DANIAL HAFIZ
CHARACTERIZATION OF A CMOS-MEMS DEVICE FOR THE DETECTION OF WEAK VIBRATION
author_facet ABDUL RASHID, DANIAL HAFIZ
author_sort ABDUL RASHID, DANIAL HAFIZ
title CHARACTERIZATION OF A CMOS-MEMS DEVICE FOR THE DETECTION OF WEAK VIBRATION
title_short CHARACTERIZATION OF A CMOS-MEMS DEVICE FOR THE DETECTION OF WEAK VIBRATION
title_full CHARACTERIZATION OF A CMOS-MEMS DEVICE FOR THE DETECTION OF WEAK VIBRATION
title_fullStr CHARACTERIZATION OF A CMOS-MEMS DEVICE FOR THE DETECTION OF WEAK VIBRATION
title_full_unstemmed CHARACTERIZATION OF A CMOS-MEMS DEVICE FOR THE DETECTION OF WEAK VIBRATION
title_sort characterization of a cmos-mems device for the detection of weak vibration
publishDate 2017
url http://utpedia.utp.edu.my/id/eprint/19100/1/Final%20Dissertation%20Danial%20Hafiz%2019139.pdf
http://utpedia.utp.edu.my/id/eprint/19100/
_version_ 1761620909064454144
score 13.211869

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