BaxSr1−xTiO3 thin films by a chemical process
Stoichiometric BaxSr1-xTiO3 samples with various of x were prepared by a solution method. The starting materials were titanium isopropoxide and hydroxides of barium and strontium. Powders were obtained by evaporation of the precursor solution, and thin films were deposited by spin coating. The annea...
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1994
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my.utp.eprints.79182012-08-14T03:08:55Z BaxSr1−xTiO3 thin films by a chemical process Burhanudin, Zainal Arif Tomar, M.S. Dayalan, E. QC Physics Stoichiometric BaxSr1-xTiO3 samples with various of x were prepared by a solution method. The starting materials were titanium isopropoxide and hydroxides of barium and strontium. Powders were obtained by evaporation of the precursor solution, and thin films were deposited by spin coating. The annealing temperature required to obtain complete conversion to the crystalline material increases with increasing x and ranges from 150 to 600 °C. High quality polycrystalline films of Ba0.5Sr0.5TiO3 were achieved on a silicon substrate at 550 °C. Leakage current as a function of applied voltage (I–V) measurements on the metal-insulator-semiconductor structure (where the insulating layer is Ba0.5Sr0.5TiO3 film) on n-type silicon substrates showed diode-like behavior. 1994-12-15 Article PeerReviewed http://www.sciencedirect.com/science/article/pii/0040609094902933 Burhanudin, Zainal Arif and Tomar, M.S. and Dayalan, E. (1994) BaxSr1−xTiO3 thin films by a chemical process. Thin Solid Films, 253 (1-2). pp. 53-56. http://eprints.utp.edu.my/7918/ |
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QC Physics Burhanudin, Zainal Arif Tomar, M.S. Dayalan, E. BaxSr1−xTiO3 thin films by a chemical process |
| description |
Stoichiometric BaxSr1-xTiO3 samples with various of x were prepared by a solution method. The starting materials were titanium isopropoxide and hydroxides of barium and strontium. Powders were obtained by evaporation of the precursor solution, and thin films were deposited by spin coating. The annealing temperature required to obtain complete conversion to the crystalline material increases with increasing x and ranges from 150 to 600 °C. High quality polycrystalline films of Ba0.5Sr0.5TiO3 were achieved on a silicon substrate at 550 °C. Leakage current as a function of applied voltage (I–V) measurements on the metal-insulator-semiconductor structure (where the insulating layer is Ba0.5Sr0.5TiO3 film) on n-type silicon substrates showed diode-like behavior.
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| format |
Article |
| author |
Burhanudin, Zainal Arif Tomar, M.S. Dayalan, E. |
| author_facet |
Burhanudin, Zainal Arif Tomar, M.S. Dayalan, E. |
| author_sort |
Burhanudin, Zainal Arif |
| title |
BaxSr1−xTiO3 thin films by a chemical process
|
| title_short |
BaxSr1−xTiO3 thin films by a chemical process
|
| title_full |
BaxSr1−xTiO3 thin films by a chemical process
|
| title_fullStr |
BaxSr1−xTiO3 thin films by a chemical process
|
| title_full_unstemmed |
BaxSr1−xTiO3 thin films by a chemical process
|
| title_sort |
baxsr1−xtio3 thin films by a chemical process |
| publishDate |
1994 |
| url |
http://www.sciencedirect.com/science/article/pii/0040609094902933 http://eprints.utp.edu.my/7918/ |
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1738655615114280960 |
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13.22586 |