Electrical properties of metal-ferroelectric-insulator-semiconductor structure using BaxSr1-xTiO3 for ferroelectric-gate field effect transistor
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Main Authors: | , |
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Format: | Article |
Language: | English |
Published: |
Elsevier Ltd.
2011
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Online Access: | http://dspace.unimap.edu.my/xmlui/handle/123456789/13398 |
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